AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Tripathy, S.; Lin, Vivian Kaixin; Dolmanan, Surani Bin; Tan, Jackson; Kajen, R. S.; Bera, L. K.; Teo, Siew Lang; Kumar, M. Krishna; Arulkumaran, S.; Ng, G. I.; Vicknesh, S.; Todd, Shane; Wang, W. Z.; Lo, Guo‐Qiang; Li, H.; Lee, D.; Han, Shaowen

doi:10.1063/1.4746751

Cited by 102 publications

(58 citation statements)

References 13 publications

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“…[1][2][3][4] Epitaxial AlGaN/GaN heterostructure forms two-dimensional electron gas (2DEG) at the interface due to the unique polarization properties of III-Nitride materials. 5,6 The spontaneous polarization and piezoelectric polarizations play an important role in the formation of 2DEG at the AlGaN/GaN interfaces.…”

Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

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Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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“…As a step in this direction, several investigators have reported Au-free contacts to III-V devices with similar electrical performance as traditional Au-based contacts typically used for III-V devices [38][39][40]. Recent advances in the epitaxial growth of GaN on silicon has shown that the growth of device-quality GaN HEMTs epitaxy on 200 mm diameter Si substrates is feasible [40,41]. Both of these results open up the possibility of fabricating GaN HEMTs in existing 200 mm Si foundries, thereby providing a cost-effective solution for heterogeneous integration of GaN and Si CMOS.…”

Section: Future Prospectsmentioning

confidence: 99%

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

Kazior

2014

Phil. Trans. R. Soc. A.

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Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

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“…Wide bandgap semiconductor power devices offer great performance improvements and can work in harsh environments where silicon power devices cannot function. One of the main advantages of III-nitride materials such as gallium nitride is the ability to form a heterojunction with a ternary alloy made from another III-nitride semiconductor material such as aluminium gallium nitride [9]- [14]. The high electric breakdown field of GaN is a result of the wide bandgap of 3.44 eV at room temperature of the material and enables the application of high supply voltages on GaN-based devices, which is one of the two requirements for high power device performance.…”

Section: Introductionmentioning

confidence: 99%

A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN

Karami¹,

Sabaghi²,

Masoumi³

2017

WJET

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The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance; and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.

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AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Cited by 102 publications

References 13 publications

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN

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