2005
DOI: 10.1585/jspf.81.653
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Aligned Carbon Nanotube Formation via Radio-Frequency Magnetron Plasma Chemical Vapor Deposition

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Cited by 4 publications
(3 citation statements)
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“…The CNTs grown were characterized by field emission scanning electron microscopy (FE-SEM, Hitachi S4700), and high-resolution transmission electron microscopy (TEM, JEOL, JEM2000EX) and Raman spectroscopy (Jovin Yvon, LabRAM HR800) were carried out to determine the structure of the Pd-filled CNTs. in Figure 1(b) and those on Pd (40 nm)/Al (10 nm)/Si in Figure 1(c) are well aligned and homogeneously distributed by the plasma sheath effect in MPECVD [16]. The diameter of the tip of CNTs is approximately 100 nm, and Pdrelated materials are visible as bright contrast inside the CNTs as shown in Figure 1(d).…”
Section: Methodsmentioning
confidence: 72%
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“…The CNTs grown were characterized by field emission scanning electron microscopy (FE-SEM, Hitachi S4700), and high-resolution transmission electron microscopy (TEM, JEOL, JEM2000EX) and Raman spectroscopy (Jovin Yvon, LabRAM HR800) were carried out to determine the structure of the Pd-filled CNTs. in Figure 1(b) and those on Pd (40 nm)/Al (10 nm)/Si in Figure 1(c) are well aligned and homogeneously distributed by the plasma sheath effect in MPECVD [16]. The diameter of the tip of CNTs is approximately 100 nm, and Pdrelated materials are visible as bright contrast inside the CNTs as shown in Figure 1(d).…”
Section: Methodsmentioning
confidence: 72%
“…Prior to the CNTs growth, the substrate was exposed to hydrogen plasma for 3 minutes to clean the substrate as well as to activate the catalyst. Hydrogen plasma has a significant annealing effect on Pd particles and alters their morphology [16]. The CNTs grown were characterized by field emission scanning electron microscopy (FE-SEM, Hitachi S4700), and high-resolution transmission electron microscopy (TEM, JEOL, JEM2000EX) and Raman spectroscopy (Jovin Yvon, LabRAM HR800) were carried out to determine the structure of the Pd-filled CNTs.…”
Section: Methodsmentioning
confidence: 99%
“…Plasma processes have already been implemented in semiconductor processing using weakly ionized plasma, and new plasma-based technologies such as plasma CVD for the aligned growth of nanotubes [1], and microplasma sputtering of thin films inside narrow tubes [2], have recently been introduced. The structure and characteristics of plasmas are being analyzed by both simulations and experiments.…”
Section: Introductionmentioning
confidence: 99%