Alignment mark detection in CMOS materials with SCALPEL e-beam lithography

Farrow, R. C.; Waskiewicz, W. K.; Kizilyalli, I.C.; Gallatin, Gregg M.; Liddle, J. Alexander; Mkrtchyan, Masis M.; Kornblit, A.; Ocola, Leonidas E.; Klemens, F.; Felker, Joseph A.; Biddick, C.; Kraus, J.; Blakey, Myrtle I.; Orphanos, P.A.; Layadi, N.; Merchant, Sailesh M.

doi:10.1117/12.351093

SPIE Proceedings

1999

DOI: 10.1117/12.351093

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Alignment mark detection in CMOS materials with SCALPEL e-beam lithography

R. C. Farrow¹,

W. K. Waskiewicz²,

I.C. Kizilyalli³

et al.

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2001

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SCALPEL mark detection using Si/SiO2 and 100 keV backscattered electrons

Farrow¹,

Mkrtchyan²,

Kizilyalli³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inElectron back-scattering coefficient below 5 keV: Analytical expressions and surface-barrier effects J. Appl. Phys. 112, 084905 (2012); 10.1063/1.4759367 100 keV electron backscattered range and coefficient for silicon J.Scattering with angular limitation in projection electron-beam lithography ͑SCALPEL͒ marks for alignment and registration have been fabricated in SiO 2 deposited in Si trenches using a process that is similar to that used for shallow trench isolation in complementary metal-oxide-semiconductor ͑CMOS͒ integrated circuits. The marks were detected using backscattered electrons in a SCALPEL exposure tool using 100 keV incident electrons. The signal-to-noise from the Si/SiO 2 marks is comparable to that measured from Si/WSi 2 marks fabricated in CMOS gate material. The Si/SiO 2 marks fabricated from this process are a viable option for gate alignment to the thin oxide level and is extensible to circuits with critical dimensions less than 100 nm.

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SCALPEL mark detection using Si/SiO2 and 100 keV backscattered electrons

Farrow¹,

Mkrtchyan²,

Kizilyalli³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

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Alignment mark detection in CMOS materials with SCALPEL e-beam lithography

Cited by 1 publication

References 14 publications

SCALPEL mark detection using Si/SiO2 and 100 keV backscattered electrons

SCALPEL mark detection using Si/SiO2 and 100 keV backscattered electrons

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