Alignment strategies for planarizing technologies

Shiraishi, Nobuo; Sugaya, Ayako; Coon, Derek P.

doi:10.1117/12.276003

Cited by 6 publications

(2 citation statements)

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“…To verify simulation capability, field image alignment (FIA) signal of a Nikon NSR-S308F ArF scanner was investigated [5,6]. FIA consists of an off-axis alignment microscope with a broadband light source (halogen lamp) and a CCD camera.…”

Section: Benchmark Study: Simulation Results Verificationmentioning

confidence: 99%

Overlay metrology for dark hard mask process: simulation and experiment study

Shin¹,

Chalykh²,

Kang³

et al. 2007

SPIE Proceedings

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Simulation and experimental study results are reported to solve align/overlay problem in dark hard mask process in lithography. For simulation part, an in-house simulator, which is based on rigorous coupled wave analysis and Fourier optics method of high NA imaging, is used. According to the simulation and experiment study, image quality of alignment and overlay marks can be optimized by choosing hard mask and sub-film thickness carefully for a given process condition. In addition, it is important to keep the specification of film thickness uniformity within a certain limit. Simulation results are confirmed by experiment using the state of art memory process in Samsung semiconductor R&D facility.

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Section: Benchmark Study: Simulation Results Verificationmentioning

confidence: 99%

Overlay metrology for dark hard mask process: simulation and experiment study

Shin¹,

Chalykh²,

Kang³

et al. 2007

SPIE Proceedings

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“…Attention has been focused on poor contrast caused by planarization during shallow trench isolation (STI) where following polysilicon deposition, the relief of the alignment mark, or step height, can be less than 20 nm [5].…”

Section: Introductionmentioning

confidence: 99%

Optical flatness and alignment mark contrast in highly planar technologies

Golz

Martin²,

Chen³

1997 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop ASMC 97 Proceedings

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The authors discuss an interlevel alignment problem encountered during the implementation of a highly planarized microelectronics manufacturing technology. The problem is caused by alignment marks with poor bright field image contrast and affects the ability of alignment and registration systems to properly detect and resolve mark positions. The bright field image contrast of the marks, which are formed by recessing polysilicon through a patterned silicon nitride layer, is found to depend strongly on both the depth of the mark as well as the thickness of the overlying nitride. Computer simulation is used to explore a correlation between poor contrast and small optical step height highlighting a distinction between physical flatness and optical flatness. A simple optical path length calculation which takes into account process variations serves as a check for optical flatness and provides a set of guidelines for ensuring reliable detection of alignment marks.

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