AlInAs/GaInAs metal-semiconductor-metal photodiodes with very low dark current

Temmar, Abdelkader; Praseuth, J.P.; Palmier, J.F.; Scavennec, A.

doi:10.1016/0167-9317(91)90226-4

Cited by 2 publications

(1 citation statement)

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“…0268-1242/93/091731 + 10 $07.50 @ 1993 IOP Publishing Ltd During the last few years low-leakage MS diodes in the n-type-based InP system have been reported [3-71. Temmar et al [3] have reported low leakage currents for metal-semiconductor-metal (MSM) photodiodes using lattice-matched n-type AlInAs layers above the photosensitive InGaAs layer. MS diodes on n-type AlInAs layers have a larger Schottky barrier height than does ntype InP [4], resulting in improved electrical performance for MS diodes.…”

Section: Introductionmentioning

confidence: 99%

High effective Schottky barriers on n-type InP using Zn-based metallizations and rapid thermal annealing

Clausen

Leistiko

1993

Semicond. Sci. Technol.

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Surface barrier diodes using different Zn-based metallizations, which were alloyed using rapid thermal annealing in order to make low-leakage, high barrier metalkemiconductor diodes on n-type InP, have been studied. The electrical properties of diodes using Cr in between the Zn layer and the InP are poor, because Cr and P forms a diffusion barrier-like layer adjacent to the semiconductor surface, which is hard to overcome and, more important. s h u n t s the diode because it forms low effective barriers to n-type InP. For AulCrIZnlAullnP diodes, high effective Schottky barriers of 0.76 eV from J-V characteristics and 1.23 eV from C-V characteristics have been measured for the same barrier diodes, indicating that the surface is not fully covered with the high effective barrier height interfacial phase, but that lower effective barrier height interfacial phases are also present. The dominant transport mechanism of carriers across these metal-semiconductor diodes is found to be thermionic emission from J-V-T measurements, and the leakage current density measured at -1 V is 8 x 10-6-iO-5 Acm-'. From depth profiling using Rutherford backscattering spectrometry and near-surface imaging using scanning electron microscopy it is seen that In is depleted from the InP surface due to Zn-PICr-P stable phase formation and that it either agglomerates at the surface of the metallization or is incorporated into the Au layer forming stable Au-In and I n 4 compounds.

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Section: Introductionmentioning

confidence: 99%