AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes

Ren, Min; Maddox, Scott J.; Woodson, Madison; Chen, Yaojia; Bank, Seth R.; Campbell, Joe C.

doi:10.1063/1.4949335

Cited by 57 publications

(16 citation statements)

References 18 publications

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“…Recently, our group achieved very low noise, k $ 0.01-0.05, with the Al x In 1-x As y Sb 1-y (x ¼ 0.7, 0.6, and 0.5) APD grown lattice matched to GaSb by MBE as digital alloys (DAs). 40,41 The fact that Al x In 1-x As y Sb 1-y is a direct bandgap material under 76% Al means that it could also achieve higher speed operation than indirect bandgap materials in the mid-to near-infrared. A question regarding these APDs is whether Al x In 1-x As y Sb 1-y is inherently a low-noise material such as Si, HgCdTe, and InAs or the result of digital alloy growth.…”

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confidence: 99%

Toward deterministic construction of low noise avalanche photodetector materials

Rockwell

Ren

Woodson

et al. 2018

Applied Physics Letters

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Over the past 40þ years, III-V materials have been intensively studied for avalanche photodetectors, driven by applications including optical communications, imaging, quantum information processing, and autonomous vehicle navigation. Unfortunately, impact ionization is a stochastic process that introduces noise, thereby limiting sensitivity and achievable bandwidths, leading to intense effort to mitigate this noise through the identification of different materials and device structures. Exploration of these materials has seen limited success as it has proceeded in a largely ad hoc fashion due to little consensus regarding which fundamental properties are important. Here, we report an exciting step toward deterministic design of low-noise avalanche photodetector materials by alternating the composition at the monolayer scale; this represents a dramatic departure from previous approaches, which have concentrated on either unconventional compounds/alloys or nanoscale band-engineering. In particular, we demonstrate how to substantially improve upon the noise characteristics of the current state-of-the art telecom avalanche multipliers, In 0.52 Al 0.48 As grown on InP substrates, by growing the structure as a strain-balanced digital alloy of InAs and AlAs layers, each only a few atomic layers thick. The effective k-factor, which has historically been considered a fundamental material property, was reduced by 6-7Â from k ¼ 0.2 for bulk In 0.52 Al 0.48 As to k ¼ 0.05 by using the digital alloy technique. We also demonstrate that these "digital alloys" can significantly extend the photodetector cutoff wavelength well beyond those of their random alloy counterparts.

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confidence: 99%

Toward deterministic construction of low noise avalanche photodetector materials

Rockwell

Ren

Woodson

et al. 2018

Applied Physics Letters

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“…Recently, Al x In 1−x As y Sb 1−y digital alloy APDs have exhibited excess noise factors characterized by k as low as 0.01 [4][5][6][7]. In addition, In 0.52 Al 0.48 As digital alloy APDs have achieved k values from 0.03 to 0.09, which are lower than those of the random alloy materials of the same composition [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys

Yuan¹,

Zheng²,

Tan³

et al. 2018

Photon. Res.

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Digital alloy In 0.52 Al 0.48 As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionization characteristics of In 0.52 Al 0.48 As and Al 0.74 Ga 0.26 As digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.

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“…Previously reported Al x In 1-x As y Sb 1-y PIN and SACM APDs, which are lattice matched to GaSb, have demonstrated low excess noise, k = 0.01~0.05, and high absorption efficiency covering a wide optical spectrum [6][7][8][9]. In this paper we report temperature-dependent studies of these Al x In 1-x As y Sb 1-y APDs.…”

Section: Introductionmentioning

confidence: 82%

Al_xIn_1-xAs_ySb_1-y photodiodes with low avalanche breakdown temperature dependence

Jones¹,

Yuan²,

Ren³

et al. 2017

Opt. Express

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We report AlInAsSb PIN and Separate Absorption, Charge and Multiplication (SACM) avalanche photodiodes (APDs) with high temperature stability. This work is based on measurements of avalanche breakdown voltage of these devices for temperatures between 223 K and 363 K. Breakdown voltage temperature coefficients are shown to be lower than those of APDs fabricated with other materials with comparable multiplication layer thicknesses.

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AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes

Abstract: We report AlxIn1−xAsySb1−y separate absorption, charge, and multiplication avalanche photodiodes (APDs) that operate in the short-wavelength infrared spectrum. They exhibit excess noise factor less or equal to that of Si and the low dark currents typical of III-V compound APDs.

Cited by 57 publications

References 18 publications

Toward deterministic construction of low noise avalanche photodetector materials

Toward deterministic construction of low noise avalanche photodetector materials

Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys

Al_xIn_1-xAs_ySb_1-y photodiodes with low avalanche breakdown temperature dependence

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