Motivated
by the recent discovery of MA2Z4 family materials,
we perform a systematic study on the structural
stability and electronic properties of MSi2N4 nanosheets with 4d and 5d transition metals. We have identified
12 stable MSi2N4 nanosheets with trigonal prismatic
(H-phase) or octahedral (T-phase) geometries, which have robust dynamic,
mechanical, and thermal stabilities. It is found that most of the
stable MSi2N4 nanosheets concentrate in the
early transition-metal systems. Both the H- and T-phase geometries
are stable in groups IIIB and IVB metal systems, while only the H-phase
is stable for groups VB and VIB ones. Regarding the late transition-metal
systems, only the PdSi2N4 and PtSi2N4 nanosheets with a T-phase geometry are stable. These
MSi2N4 nanosheets exhibit versatile electronic
properties depending on the number of valence electrons. Both the
H- and T-YSi2N4 nanosheets present a half-metallic
behavior, while the H-NbSi2N4 one is a promising
ferrovalley material with a large valley polarization. The H-MoSi2N4, H-WSi2N4, T-PdSi2N4, and T-PtSi2N4 nanosheets
have appropriate band edge energies, which are suitable for water
splitting under a pH neutral environment. The semiconducting MSi2N4 nanosheets can even form diverse band alignments,
including types I, II, and V, with the H-MoS2 nanosheet.
Our study unveils the robust structural stability and versatile electronic
properties of 4d/5d MSi2N4 nanosheets, which
enable their potential applications in electronics, spintronics, and
valleytronics.