Alkali metal promoted oxidation of the Si(113) surface

Hwang, Chan‐Cuk; An, Ki‐Seok; Park, Rae‐Jun; Kim, Jeong-Seon; Lee, Ju-Bong; Park, Chong-Yun; Kimura, Akio; Kakizakia, Akito

doi:10.1016/s0040-6090(98)01510-7

Cited by 4 publications

(2 citation statements)

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“…In general, an ultrathin SiO 2 films (≤ 1 nm) was formed on the silicon substrate that the silicon/SiO 2 interface becomes crucial for good transistor behavior. Several fabrication methods have been employed for the formed of ultrathin SiO 2 films, such as rapid thermal oxidation (RTO) [36], oxidation with excited molecules and ions [37,38], plasma oxidation [39,40], photo-oxidation [34,41], ozone oxidation [43], metal-promoted oxidation [44], anodic oxidation [45,46] and nitric acid (HNO 3 ) vapor oxidation [47,48] etc. When a reverse bias is applied to a MOS photodiode, the energy bands in the semiconductor bend and a potential well is formed between the oxide and the semiconductor.…”

Section: Ultrathin Sio 2 Filmsmentioning

confidence: 99%

Si-Based ZnO Ultraviolet Photodiodes

Chen¹

2012

Photodiodes - From Fundamentals to Applications

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We are IntechOpen, the first native scientific publisher of Open Access books 12.2%108,000 1.7 M TOP 1% 151 3,350Chapter 6 Si-Based ZnO Ultraviolet Photodiodes Lung-Chien ChenAdditional information is available at the end of the chapter http://dx.doi.org/10.5772/48825 . IntroductionSemiconductor-based ultraviolet UV photodiodes have been continuously developed that can be widely used in various commercial, civilian areas, and military applications, such as optical communications, missile launchinμ detection, ame detection, UV radiation calibration and monitorinμ, chemical and bioloμical analysis, optical communications, and astronomical studies, etc. [ -]. All these applications require very sensitive devices with hiμh responsivity, λast response time, and μood siμnal-to-noise ratio is common desirable characteristics. Currently, liμht detection in the UV spectral ranμe still uses Si-based optical photodiodes. Due to the Si-based photodiodes are sensitive to visible and inλrared radiation, the responsivity in the UV reμion is still low [ -]. To avoid these disadvantaμes, wide-bandμap materials such as diamond, SiC, III-nitrides and wide-bandμap II-VI materials are under intensive studies to improve the responsivity and stability oλ UV photodiodes, because oλ their intrinsic visible-blindness [ ].Amonμ them, zinc oxide ZnO is another wide direct bandμap material due to its sensitive and UV photoresponse in the UV reμion [ -]. ZnO has attracted attention as a promisinμ material λor optical devices, owinμ to its larμe direct band μap enerμy oλ . eV and a larμe exciton bindinμ enerμy oλ meV at room temperature compared to other II-VI semiconductors [ -]. Thereλore, ZnO is promisinμ λor use in liμht-emittinμ diodes LEDs , laser diodes LDs , ultraviolet UV detection devices [ -]. Several deposition methods have been employed λor the μrowth oλ ZnO layers, includinμ metal-orμanic chemical vapor deposition MOCVD , molecular beam epitaxy MBE , pulsed laser deposition PLD , sol-μel and spray pyrolysis [ -]. The synthesis oλ p-type ZnO λilms with acceptable stability and reproduci-

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Section: Ultrathin Sio 2 Filmsmentioning

confidence: 99%

Si-Based ZnO Ultraviolet Photodiodes

Chen¹

2012

Photodiodes - From Fundamentals to Applications

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“…The thermal oxidation method always involves high processing temperatures ( 800 • C), which induces stress due to the difference between the oxidation temperature and the device operational temperature. This disadvantage can be avoided by employing low temperature formation methods such as oxidation with excited molecules and ions [14][15][16], plasma oxidation [17,18], photooxidation [19], ozone oxidation [20,21], metal-promoted oxidation [22,23] and anodic oxidation [24,25]. Using these methods, however, the leakage current density of the SiO 2 /Si structure is higher than that produced by conventional thermal oxidation.…”

Section: Introductionmentioning

confidence: 99%