A novel series of air-stable and highly extended π-conjugated naphtho [2,1-b:3,4b']bisthieno [3,2-b][1]benzothiophene derivatives, NBTBT-n (n = 6, 8, 10, and 12) and NBTBTF-10 was developed. The influence of various alkoxy-side groups including straight chain with different chain length and branched chain on the FET device performance were also investigated. There was a 10 progressive enhancement in the NBTBT-based OFET device performance with an increase in the annealing temperature. The OFET devices based on NBTBT-10 fabricated by vacuum deposition exhibited the best performance with a hole mobility of 0.25 cm 2 /Vs and an on/off ratio of 10 5 -10 6 after annealing at 220 °C. In addition, fluorinated naphtho[2,1-b:3,4-b']bisthieno [3,2-b][1]benzothiophene, NBTBTF-10 showed good p-type transistor behaviour with a hole mobility of 0.24 cm 2 /Vs and an on/off 15 ratio of 10 6 -10 7 which was achieved at a lower annealing temperature of 140 °C, suggesting the important contribution of the dipole-dipole interactions induced by the fluorine atoms in the molecular packing. As a result, naphtho[2,1-b:3,4-b']bisthieno [3,2-b][1]benzothiophene framework shows promise as a useful building block to construct organic semiconductors for next-generation high performance organic electronics. Journal Name, [year], [vol], 00-00 | 7 TOC Naphtho[2,1-b:3,4-b']bisthieno[3,2-b][1]benzothiophene derivatives 5exhibiting a hole mobility up to 0.25 cm 2 /Vs show promise as a useful building block to construct next-generation high performance organic semiconductors.