2011
DOI: 10.1109/tthz.2011.2160021
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All Active MMIC-Based Wireless Communication at 220 GHz

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Cited by 198 publications
(66 citation statements)
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“…Here, we briefly describe a recent progress of electronic devices and circuits. At frequencies above 100 GHz, GaAs and InP devices and integrated circuits (ICs) have been key players in all-electronic THz communications research, because of high cut-off and maximum frequencies of transistors [8]- [10], [18], [20], [33], [39], [40].…”
Section: Transmitters and Receiversmentioning
confidence: 99%
“…Here, we briefly describe a recent progress of electronic devices and circuits. At frequencies above 100 GHz, GaAs and InP devices and integrated circuits (ICs) have been key players in all-electronic THz communications research, because of high cut-off and maximum frequencies of transistors [8]- [10], [18], [20], [33], [39], [40].…”
Section: Transmitters and Receiversmentioning
confidence: 99%
“…Using Maxwell equations, Electric field components (E φ and E r ) can be found in terms of partial derivatives of H z,n in (8). According to Fig.…”
Section: Theoretical Backgroundmentioning
confidence: 99%
“…Over the past few years, THz wireless communication using electro-photonic technologies has seen impressive progress [4,5], but to adopt this approach will increase the system size because of the requirement for extra optical components. Recently, utilizing all-electronic technologies to fulfill THz wireless transmission attracts significant attention owing to the potential of system-on-chip integration [6,7,8,9,10,11]. In this regard, the existing primary technological bottleneck is the lack of enabling high-performance and cost-effective electronic devices.…”
Section: Introductionmentioning
confidence: 99%