All Antimony Chalcogenide Tandem Solar Cell

Zhang, Jianwang; Lian, Weitao; Yin, Yiwei; Wang, Xiaomin; Tang, Rongfeng; Qian, Chen; Hao, Xiaojing; Zhu, Chen; Chen, Tao

doi:10.1002/solr.202000048

Cited by 51 publications

(57 citation statements)

References 22 publications

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“…[85] Their combination as top and bottom cell materials could lead to a cost-effective, stable, and environmentally friendly approach for tandem cells. In this regard, Zhang et al [166] demonstrated a proof-of-concept of all antimony chalcogenide 4T tandem solar cell in 2020. They utilized Sb 2 S 3 and Sb 2 Se 3 as top and bottom cells, respectively, as shown in Figure 14d.…”

Section: (21 Of 28)mentioning

confidence: 99%

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Wide Bandgap Sb₂S₃ Solar Cells

Shah

Chen

Khalaf

et al. 2021

Adv Funct Materials

125

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The wide bandgap Sb 2 S 3 is considered to be one of the most promising absorber layers in single-junction solar cells and a suitable top-cell candidate for multi-junction (tandem) solar cells. However, compared to mature thinfilm technologies, Sb 2 S 3 based thin-film solar cells are still lagging behind in the power conversion efficiency race, and the highest of just 7.5% has been achieved to date in a sensitized single-junction structure. Furthermore, to break single junction solar cell based Shockley-Queisser (S-Q) limits, tandem devices with wide bandgap top-cells and low bandgap bottom-cells hold a high potential for efficient light conversion. Though matured and desirable bottom-cell candidates like silicon (Si) are available, the corresponding mature wide bandgap top-cell candidates are still lacking. Hence, a literature review based on Sb 2 S 3 solar cells is urgently warranted. In this review, the progress and present status of Sb 2 S 3 solar cells are summarized. An emphasis is placed mainly on the improvement of absorber quality and device performance. Moreover, the low-performance causes and possible overcoming mechanisms are also explained. Last but not least, the potential and feasibility of Sb 2 S 3 in tandem devices are vividly discussed. In the end, several strategies and perspectives for future research are outlined.

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Section: (21 Of 28)mentioning

confidence: 99%

Section: Stabilitymentioning

confidence: 99%

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Wide Bandgap Sb₂S₃ Solar Cells

Shah

Chen

Khalaf

et al. 2021

Adv Funct Materials

125

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“…Some simulations have implied that the high interfacial defect density and poor carrier transportation drastically limit the device performance of Sb 2 S 3 -based photovoltaics; thus, the present efficiency can be improved by controlling the orientation of Sb 2 S 3 films [44,[63][64][65][66]. Moreover, in 2020, Zhang et al demonstrated a proof-of-concept four-terminal tandem device with a 7.93% efficiency using Sb 2 Se 3 and Sb 2 S 3 solar cells as the bottom and top subcells [67]. This attempt implied that Sb 2 S 3 has the potential for application in tandem solar cells.…”

Section: Potential Candidates As Top Cell For Si-based Tandemsmentioning

confidence: 99%

Possible top cells for next-generation Si-based tandem solar cells

Chen

Tang

2020

Front. Optoelectron.

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Si-based solar cells, which have the advantages of high efficiency, low manufacturing costs, and outstanding stability, are dominant in the photovoltaic market. Currently, state-of-the-art Si-based solar cells are approaching the practical limit of efficiency. Constructing Si-based tandem solar cells is one available pathway to break the theoretical efficiency limit of single-junction silicon solar cells. Various top cells have been explored recently in the construction of Si-based tandem devices. Nevertheless, many challenges still stand in the way of extensive commercial application of Si-based tandem solar cells. Herein, we summarize the recent progress of representative Si-based tandem solar cells with different top cells, such as III-V solar cells, wide-bandgap perovskite solar cells, cadmium telluride (CdTe)-related solar cells, Cu(In,Ga)(Se,S) 2 (CIGS)-related solar cells, and amorphous silicon (a-Si) solar cells, and we analyze the main bottlenecks for their next steps of development. Subsequently, we suggest several potential candidate top cells for Si-based tandem devices, such as Sb 2 S 3 , Se, CdSe, and Cu 2 O. These materials have great potential for the development of high-performance and low-cost Si-based tandem solar cells in the future.

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“…Hence, and owing to these wonderful properties, they are very suitable for producing window layers and economical absorbers for the solar cells [13]. It is worth noting that, the fabrication of the window layers require a semiconducting material that has a wide band gap ( 3.5 eV -3.8 eV) and of higher transmittance [14]. These unique conditions have been exhibited in the metal oxides, such as ZnO, SnO2, and In2O3, which have good efficiency to make as window layers of solar cells [15].…”

Section: Introductionmentioning

confidence: 99%

Comparative Studies for Determining the Optical Band-gap Energy of the Novel Polycrystalline Thin Znga2s4 Films Sprayed at Different Film Thicknesses

Hassanien

Akl

Radaf

2021

Preprint

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This article has dedicated to studying some structural features and optical characteristics of the Novel polycrystalline ZnGa2S4 (ZGS) thin films utilizing spray pyrolysis process at different thicknesses (293, 375, 452, and 517nm). The microstructural properties and crystal defects of these films have been studied in previous work. While in this work, the crystallinity degree and crystalline volume fraction have been studied using X-ray diffractograms. The stoichiometry of these ZnGa2S4 films has been checked using the energy dispersive x-ray analysis. The field-emission-scanning-electron microscope has been utilized to investigate the morphology of ZGS films' surfaces. Optical properties have been studied via transmittance and reflectance spectra in the range 300nm - 2500nm. Some important optical parameters such as absorption coefficient, skin depth, Urbach's energy, steepness parameters, and electron-phonon interactions have been extensively studied. The direct and indirect gap energy were determined by different four models and compared with Tauc’s model. Optical data analysis revealed that; all studied properties are strongly dependent on the film thickness. The optical band gap values were slightly decreased from 3.7eV to 4.1eV with increment of the film thickness owing to improving the crystallization process. These obtained results confirm that these films are wide band gap semiconductors, which makes them recommended for use in many solar cell applications as a window layer.

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All Antimony Chalcogenide Tandem Solar Cell

Cited by 51 publications

References 22 publications

Wide Bandgap Sb₂S₃ Solar Cells

Wide Bandgap Sb₂S₃ Solar Cells

Possible top cells for next-generation Si-based tandem solar cells

Comparative Studies for Determining the Optical Band-gap Energy of the Novel Polycrystalline Thin Znga2s4 Films Sprayed at Different Film Thicknesses

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All Antimony Chalcogenide Tandem Solar Cell

Cited by 51 publications

References 22 publications

Wide Bandgap Sb2S3 Solar Cells

Wide Bandgap Sb2S3 Solar Cells

Possible top cells for next-generation Si-based tandem solar cells

Comparative Studies for Determining the Optical Band-gap Energy of the Novel Polycrystalline Thin Znga2s4 Films Sprayed at Different Film Thicknesses

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Wide Bandgap Sb₂S₃ Solar Cells

Wide Bandgap Sb₂S₃ Solar Cells