All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS<sub>2</sub>/Graphene Heterostructures

Shi, Jianping; Liu, Mengxi; Wen, Jinxiu; Ren, Xibiao; Zhou, Xinyu; Ji, Qingqing; Ma, Donglin; Zhang, Yu; Jin, Chuanhong; Chen, Huanjun; Deng, Shaozhi; Xu, Ning; Liu, Zhongfan; Zhang, Yanfeng

doi:10.1002/adma.201503342

Cited by 142 publications

(144 citation statements)

References 47 publications

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“…4(a); orange crosses) [23,42,[47][48][49] are within 100 meV of our estimated value. We also note that the band gap we measured at the residual doping condition is comparable to recent photocurrent [50] and PLE [29,30] measurements, but substantially higher than scanning tunneling microscopy (STM) measurements of ML-MoS2 on conductive substrates [22,51]. And further, a recent STM study of suspended ML-MoS2 [52] finds a gap approaching the value we determined for the zero-doping condition.…”

Section: Resultssupporting

confidence: 88%

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in MonolayerMoS2

et al. 2017

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Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena.Investigating the fundamental interactions underpinning these phenomenacritical to both many-body physics exploration and device applications -presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound-and freecarrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in 2D semiconductors. 2/20

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Section: Resultssupporting

confidence: 88%

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in MonolayerMoS2

et al. 2017

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“…Such a discrete six-fold FT pattern would suggest a dominant orientation of the crystallized MoS 2 that in turn opens the interesting question whether this dominant orientation may be related to a possible epitaxial relationship of the MoS 2 to the underlying graphene support. Previous literature suggested that the nonexistence 22,69,70 or existence 22,71,72 of MoS 2 /graphene epitaxy is highly process parameter dependent, resulting from the rather weak van der Waals interaction between MoS 2 and graphene. 69 When MoS 2 /graphene epitaxy was found in previous work, rotational misalignment distributions peaked at 0° and 30°.…”

Section: Resultsmentioning

confidence: 99%

Atomic-Scale in Situ Observations of Crystallization and Restructuring Processes in Two-Dimensional MoS₂ Films

et al. 2018

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We employ atomically resolved and element-specific scanning transmission electron microscopy (STEM) to visualize in situ and at the atomic scale the crystallization and restructuring processes of two-dimensional (2D) molybdenum disulfide (MoS2) films. To this end, we deposit a model heterostructure of thin amorphous MoS2 films onto freestanding graphene membranes used as high-resolution STEM supports. Notably, during STEM imaging the energy input from the scanning electron beam leads to beam-induced crystallization and restructuring of the amorphous MoS2 into crystalline MoS2 domains, thereby emulating widely used elevated temperature MoS2 synthesis and processing conditions. We thereby directly observe nucleation, growth, crystallization, and restructuring events in the evolving MoS2 films in situ and at the atomic scale. Our observations suggest that during MoS2 processing, various MoS2 polymorphs co-evolve in parallel and that these can dynamically transform into each other. We further highlight transitions from in-plane to out-of-plane crystallization of MoS2 layers, give indication of Mo and S diffusion species, and suggest that, in our system and depending on conditions, MoS2 crystallization can be influenced by a weak MoS2/graphene support epitaxy. Our atomic-scale in situ approach thereby visualizes multiple fundamental processes that underlie the varied MoS2 morphologies observed in previous ex situ growth and processing work. Our work introduces a general approach to in situ visualize at the atomic scale the growth and restructuring mechanisms of 2D transition-metal dichalcogenides and other 2D materials.

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“…The material of La 22 AC Impedance Spectroscopy measurements of the ceramics were performed with a Solatron 1260 Impedance/Gain-Phase Analyzer over a frequency range of 0.1-10 7 Hz from room temperature to 700 °C in air. Prior to the measurements, gold were pasted on both sides of the ceramic pellets and then heated at 550 °C for 40 min in air in order to get the electrodes.…”

Section: Methodsmentioning

confidence: 99%

Detection of oxide-ion and oxygen vacancy swapping via upconversion luminescence in La₂Mo₂O₉:Yb³⁺,Er³⁺

Jiang

Tao

et al. 2016

J. Mater. Chem. C

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It is requisite to detect thermally activated oxide-ion motion in oxide-ion conductors via an insitu non-contact way when applied in solid oxide fuel cells, oxygen sensors and oxygen separation. This research conceptually proposes an alternative approach by using upconversion (UC) luminescence of Yb 3+ -Er 3+ in La 2 Mo 2 O 9 oxide-ion conductor. According to the results, the temperature-dependent UC luminescence intensity ratio of 2 H 11/2 → 4 I 15/2 to 4 F 9/2 → 4 I 15/2 transitions of Er 3+ can reveal the activation process of oxide-ion and oxygen vacancy swapping at 150-200 °C in α-La 2 Mo 2 O 9 , which has a break point in the plot. It is also evidenced and convinced by the temperature-dependent UC decay curves, temperature-dependent alternating current (AC) impedance data, temperature-dependent internal friction data and temperaturedependent Raman data. The analysis according to Judd-Ofelt theory supports this point as well. 2The research may promote new application of luminescence, and offer an alternative approach to design novel multifunctional materials.

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All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS₂/Graphene Heterostructures

Cited by 142 publications

References 47 publications

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in MonolayerMoS2

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in MonolayerMoS2

Atomic-Scale in Situ Observations of Crystallization and Restructuring Processes in Two-Dimensional MoS₂ Films

Detection of oxide-ion and oxygen vacancy swapping via upconversion luminescence in La₂Mo₂O₉:Yb³⁺,Er³⁺

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All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures

Cited by 142 publications

References 47 publications

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in MonolayerMoS2

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in MonolayerMoS2

Atomic-Scale in Situ Observations of Crystallization and Restructuring Processes in Two-Dimensional MoS2 Films

Detection of oxide-ion and oxygen vacancy swapping via upconversion luminescence in La2Mo2O9:Yb3+,Er3+

Contact Info

Product

Resources

About

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS₂/Graphene Heterostructures

Atomic-Scale in Situ Observations of Crystallization and Restructuring Processes in Two-Dimensional MoS₂ Films

Detection of oxide-ion and oxygen vacancy swapping via upconversion luminescence in La₂Mo₂O₉:Yb³⁺,Er³⁺