2017
DOI: 10.1021/acsphotonics.6b00944
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All-Dielectric Color Filters Using SiGe-Based Mie Resonator Arrays

Abstract: International audienc

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Cited by 89 publications
(84 citation statements)
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“…) and e)) we highlight rather large geometrical aspect ratios η exceeding 0.7 45,61 of bare SiGe islands and progressive smoothing of the samples' roughness when increasing the thickness of the conformal layers (e.g. the root mean square, RMS goes from ∼58 nm for sample II up to ∼35 nm for sample II-C, …”
Section: B Experimentalmentioning
confidence: 79%
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“…) and e)) we highlight rather large geometrical aspect ratios η exceeding 0.7 45,61 of bare SiGe islands and progressive smoothing of the samples' roughness when increasing the thickness of the conformal layers (e.g. the root mean square, RMS goes from ∼58 nm for sample II up to ∼35 nm for sample II-C, …”
Section: B Experimentalmentioning
confidence: 79%
“…While η remains low in pure Si islands, it is higher in SiGe Si 45,61 . Here it is worth mentioning that the larger extinction coefficient of Ge with respect to Si at short wavelengths leads to enhanced losses (Supplementary Information SI Fig.SI.…”
Section: A Solid State Dewetting For Sige-based Mie Resonatorsmentioning
confidence: 92%
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