All-Electrical 9-Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation

He, Bin; Tomasello, Riccardo; Luo, Xuming; Zhang, Ran; Nie, Zhuyang; Carpentieri, Mario; Han, Xiufeng; Finocchio, Giovanni; Yu, Guoqiang

doi:10.1021/acs.nanolett.3c02978

Cited by 11 publications

(2 citation statements)

References 63 publications

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“…SAFs are appealing for device applications based on magnetic recording, spin orbit torque magnetoresistive random access memory (SOT-MRAM) and spin-transfer torque MRAM 9 – 11 . More specifically, SAFs in which the ferromagnetic layers exhibit perpendicular magnetic anisotropy (PMA) are also a current focus for soliton applications 12 , 13 , including skyrmion applications 14 , 15 , as the opposite spin orientation of consecutive magnetic layers can suppress the skyrmion Hall effect (SkHE) 16 – 20 . Recent studies have experimentally stabilized skyrmions in SAFs 21 – 23 , and shown skyrmion bubbles in SAFs being driven with smaller current densities than their ferromagnetic counterparts and with a negligible SkHE 24 .…”

Section: Introductionmentioning

confidence: 99%

Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers

Darwin,

Tomasello,

Shepley

et al. 2024

Sci Rep

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Synthetic antiferromagnetic structures can exhibit the advantages of high velocity similarly to antiferromagnets with the additional benefit of being imaged and read-out through techniques applied to ferromagnets. Here, we explore the potential and limits of synthetic antiferromagnets to uncover ways to harness their valuable properties for applications. Two synthetic antiferromagnetic systems have been engineered and systematically investigated to provide an informed basis for creating devices with maximum potential for data storage, logic devices, and skyrmion racetrack memories. The two systems considered are (system 1) CoB/Ir/Pt of N repetitions with Ir inducing the negative coupling between the ferromagnetic layers and (system 2) two ferromagnetically coupled multilayers of CoB/Ir/Pt, coupled together antiferromagnetically with an Ir layer. From the hysteresis, it is found that system 1 shows stable antiferromagnetic interlayer exchange coupling between each magnetic layer up to N = 7. Using Kerr imaging, the two ferromagnetic multilayers in system 2 are shown to undergo separate maze-like switches during hysteresis. Both systems are also studied as a function of temperature and show different behaviors. Micromagnetic simulations predict that in both systems the skyrmion Hall angle is suppressed with the skyrmion velocity five times higher in system 1 than system 2.

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Section: Introductionmentioning

confidence: 99%

Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers

Darwin,

Tomasello,

Shepley

et al. 2024

Sci Rep

Self Cite

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“…An alternative way to detect skyrmions all-electrically is to use the topological Hall effect. − However, such device setups are more difficult to fabricate, in terms of device geometries. A simpler solution is to design perpendicular tunnel junctions that can easily integrate skyrmions into conventional semiconductor devices, e.g., magnetic tunnel junctions (MTJ) for skyrmions. , …”

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confidence: 99%

Proposal for All-Electrical Skyrmion Detection in van der Waals Tunnel Junctions

Li,

Haldar,

Heinze

2024

Nano Lett.

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A major challenge for magnetic skyrmions in atomically thin van der Waals (vdW) materials is reliable skyrmion detection. Here, based on rigorous first-principles calculations, we show that all-electrical skyrmion detection is feasible in twodimensional vdW magnets via scanning tunneling microscopy (STM) and in planar tunnel junctions. We use the nonequilibrium Green's function method for quantum transport in planar junctions, including self-energy due to electrodes and working conditions, going beyond the standard Tersoff−Hamann approximation. We obtain a very large tunneling anisotropic magnetoresistance (TAMR) around the Fermi energy for a graphite/Fe 3 GeTe 2 / germanene/graphite vdW tunnel junction. For atomic-scale skyrmions, the noncollinear magnetoresistance (NCMR) reaches giant values. We trace the origin of the NCMR to spin mixing between spin-up and -down states of p z and d z 2 character at the surface atoms. Both TAMR and NCMR are drastically enhanced in tunnel junctions with respect to STM geometry due to orbital symmetry matching at the interface.

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Current‐Controllable and Reversible Multi‐Resistance‐State Based on Domain Wall Number Transition in 2D Ferromagnet Fe₃GeTe₂

Yang,

Huang,

Pei

et al. 2024

Advanced Materials

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Controlling the multi‐state switching is significantly essential for the extensive utilization of 2D ferromagnet in magnetic racetrack memories, topological devices, and neuromorphic computing devices. The development of all‐electric functional nanodevices with multi‐state switching and a rapid reset remains challenging. Herein, to imitate the potentiation and depression process of biological synapses, a full current strategy is unprecedently established by the controllable resistance‐state switching originating from the spin configuration rearrangement of domain wall number modulation in Fe3GeTe2. In particular, a strong correlation is uncovered in the reduction of domain wall number with the corresponding resistance decreasing by in‐situ Lorentz transmission electron microscopy. Interestingly, the magnetic state is reversed instantly to the multi‐domain wall state under a single pulse current with a higher amplitude, attributed to the rapid thermal demagnetization by simulation. Based on the neuromorphic computing system with full‐current‐driven artificial FGT synapses with multi‐state switching, a high accuracy of ∼91% is achieved in the handwriting image recognition pattern. The results identify 2D ferromagnet as an intriguing candidate for future advanced neuromorphic spintronics.This article is protected by copyright. All rights reserved

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All-Electrical 9-Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation

Cited by 11 publications

References 63 publications

Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers

Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers

Proposal for All-Electrical Skyrmion Detection in van der Waals Tunnel Junctions

Current‐Controllable and Reversible Multi‐Resistance‐State Based on Domain Wall Number Transition in 2D Ferromagnet Fe₃GeTe₂

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All-Electrical 9-Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation

Cited by 11 publications

References 63 publications

Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers

Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers

Proposal for All-Electrical Skyrmion Detection in van der Waals Tunnel Junctions

Current‐Controllable and Reversible Multi‐Resistance‐State Based on Domain Wall Number Transition in 2D Ferromagnet Fe3GeTe2

Contact Info

Product

Resources

About

Current‐Controllable and Reversible Multi‐Resistance‐State Based on Domain Wall Number Transition in 2D Ferromagnet Fe₃GeTe₂