All‐epitaxial fabrication of a nanowire plasmon laser structure

Abstract

An all‐epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an aluminum plasmonic metal/SiNx dielectric/InGaN quantum well shell surrounding a p‐GaN nanowire core. Strong UV luminescence was observed from as‐grown vertically‐aligned arrays as well as horizontally‐aligned nanowires transferred to a transparent carrier wafer. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)