All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-/spl mu/m wavelength range for CWDM band applications

Evaluation of 1.3-㎛ Wavelength VCSELs Grown by Metal Organic Chemical Vapor Deposition for 10 Gb/s Fiber Transmission

“…A dielectric DBR mirror and an Au metal layer were used at the top DBRs. The details of the VCSEL structure except the top InAlGaAs-InAlAs DBR layers replaced with a dielectric DBR mirror can be found in reference [5]. In the device fabrication, laser post was directly connected to anode bonding pad to reduce chip capacitance.…”

“…Recently long-wavelength vertical cavity surface emitting lasers (LW VCSELs) operating at 1.3 μm and 1.55 μm wavelengths have made significant progress for potential applications for optical transmitter sources in local and access networks and in optical interconnects [1][2][3][4][5][6][7][8][9][10]. The importance of the VCSEL devices is better recognized these days as low power consuming optical signal sources in information technology (IT) systems.…”

“…The MOCVD technology is proven to be useful for massproduction and for reliable epitaxial materials [5][6][7][8][9][10]. Results obtained for error-free data transmission over 10-km singlemode fiber (SMF) in various temperature conditions by using the direct modulated VCSELs at a bit rate of 10 Gb/s with a pseudorandom binary sequence (PRBS) of 2 31 -1 bit length are described in the following sections.…”

All-optical Flip-flop Operation Based on Polarization Bistability of Conventional-type 1.55-㎛ Wavelength Single-mode VCSELs

“…The VCSELs were all monolithic InAlGaAs/InP laser diodes (LDs) with InAlGaAs/InAlAs distributed Bragg reflectors (DBRs) whose wafer was grown by a one-step process of low-pressure metal-organic chemical vapor deposition (MOCVD) technique [16]. Even though the VCSELs were designed for a single transverse-mode output with a circular aperture of the VCSEL cavity of 12 µm diameter, due to the small gain anisotropy existing in their laser cavity they were expected to deliver laser output at one dominant polarization mode out of two orthogonal polarization modes.…”

Optical Injection-Locking of VCSELs

“…The top and bottom DBRs consisted of 33 and 50 layers respectively for 1.3μm emission VCSELs. The 0.5λ thick active region consists of seven pairs of strain-compensated (SC) InAlGaAs quantum wells (Park et al, 2006). The lower number of top DBRs in both the VCSELs was compensated by using an InAlGaAs phasematching layer and Au metal layer.…”