“…Metallic graphene and semiconducting III–V compound NWs are two classes of nanomaterials with very different properties. The inertness, extreme conductivity, − optical transparency, − and mechanical flexibility − of the graphene have made it a good candidate to be widely used as a potential high-performance electrode − and protective layer. , This can be combined with the excellent optical and transport properties of the III–V semiconductors, , with promises for optoelectronic and photovoltaic as well as quantum technology applications. , Combining graphene with semiconductor NWs has been resulted in a wide range of interesting applications, such as transparent organic single crystal field-effect transistors, NW devices with graphene electrodes, ,− high-responsivity graphene/InAs NW heterojunction photodetectors, graphene-coated waveguides, and photonic integrated sources . To realize the full performance potential for these and many other applications, both morphology and graphene/semiconductor interface must be controlled.…”