All-Inorganic Near-Infrared Luminescent Colloidal Silicon Nanocrystals: High Dispersibility in Polar Liquid by Phosphorus and Boron Codoping

Sugimoto, Hiroshi; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji; Akamatsu, Kensuke

doi:10.1021/jp305832x

Cited by 110 publications

(170 citation statements)

References 43 publications

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“…For control experiments, we synthesized Si NCs from silane to ensure the production of Si NCs with a fully H-terminated surface18. We found H-terminated Si NCs to be insoluble in most solvents, but dilute solutions may be obtained by prolonged sonication, which is consistent with previous work1920. Moreover, no free carrier absorption is observed upon interaction with hard donor molecules.…”

Section: Resultssupporting

confidence: 82%

Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

et al. 2013

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Colloidal semiconductor nanocrystals have attracted attention for cost-effective, solution-based deposition of quantum-confined thin films for optoelectronics. However, two significant challenges must be addressed before practical nanocrystal-based devices can be realized. The first is coping with the ligands that terminate the nanocrystal surfaces. Though ligands provide the colloidal stability needed to cast thin films from solution, these ligands dramatically hinder charge carrier transport in the resulting film. Second, after a conductive film is achieved, doping has proven difficult for further control of the optoelectronic properties of the film. Here we report the ability to confront both of these challenges by exploiting the ability of silicon to engage in hypervalent interactions with hard donor molecules. For the first time, we demonstrate the significant potential of applying the interaction to the nanocrystal surface. In this study, hypervalent interactions are shown to provide colloidal stability as well as doping of silicon nanocrystals.

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Section: Resultssupporting

confidence: 82%

Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

et al. 2013

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“…The latter argument is supported by XPS measurements showing a clear B-O bond signal, 10 while P-Si or P-P bonds seem preferentially formed rather than P-O bonds for Si-QDs with diameters smaller than 3.5 nm. 11,12 Moreover, also PL experiments suggest B-doped Si-QDs with an intrinsic core and heavily B-doped shells, 13 while B-P codoped colloidal Si nanocrystals show an outer B-rich shell and an inner P-rich shell, arising due to the large difference in the segregation coefficient of B and P. 65,66 In Fig. 2 we also report the Ω f of doped bulk-Si (dashed line) and a-SiO 2 (dotted line).…”

Section: A Structural Propertiesmentioning

confidence: 99%

Energetics and carrier transport in doped Si/SiO₂quantum dots

et al. 2015

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In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltage, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells.[ Electronic Supplementary Information (ESI) available. See

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“…42,43 The all-inorganic Si-NCs are very stable in alcohol, and no agglomerates and precipitates are observed for more than several years. In the SiNCs, B and P are very heavily doped and high B and P concentration shells are formed on the surface.…”

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confidence: 99%

Energy Transfer in Silicon Nanocrystal Solids Made from All-Inorganic Colloidal Silicon Nanocrystals

Furuta

Fujii

Sugimoto

et al. 2015

J. Phys. Chem. Lett.

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Energy transfer between silicon (Si) nanocrystals (NCs) in Si-NC solids was demonstrated by photoluminescence (PL) spectroscopy. Clear differences of PL spectra and the decay rates between solutions and solids of Si-NCs were observed. The change in the PL properties caused by the formation of solids could be explained by the energy transfer from small to large NCs in the size distribution. In order to obtain further evidence of NC-to-NC energy transfer, the size distribution was intentionally modified by mixing solutions of NCs with different size distributions. NC solids made from the mixed solutions exhibited significantly different PL spectral shape and decay rates from those made from unmixed solutions, providing clear evidence of NC-to-NC energy transfer in Si-NC solids.

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All-Inorganic Near-Infrared Luminescent Colloidal Silicon Nanocrystals: High Dispersibility in Polar Liquid by Phosphorus and Boron Codoping

Cited by 110 publications

References 43 publications

Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

Energetics and carrier transport in doped Si/SiO₂quantum dots

Energy Transfer in Silicon Nanocrystal Solids Made from All-Inorganic Colloidal Silicon Nanocrystals

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All-Inorganic Near-Infrared Luminescent Colloidal Silicon Nanocrystals: High Dispersibility in Polar Liquid by Phosphorus and Boron Codoping

Cited by 110 publications

References 43 publications

Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

Energetics and carrier transport in doped Si/SiO2quantum dots

Energy Transfer in Silicon Nanocrystal Solids Made from All-Inorganic Colloidal Silicon Nanocrystals

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Energetics and carrier transport in doped Si/SiO₂quantum dots