All-MOS voltage-to-current converter

Fotouhi, Bashir

doi:10.1109/4.896241

Cited by 32 publications

(21 citation statements)

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“…Numerically, the factor g, for most applications, lies between 0.5 and 0.6. The factor g was assumed as unity in the implementation of the previous converter [3]. As a result, this leads to errors in calculating α, less than ideal annihilation of the squared voltage terms, and eventually nonlinearity of the largesignal transconductance of the voltage-to-current converter.…”

Section: Transistor Current Modelingmentioning

confidence: 99%

“…Voltage-to-current converters find usage in many analog and mixed-signal integrated circuits for signal processing [3], [5]- [7], [9], [11], [12]. For example, voltage-to-current converters serve as interface conversion in switched-current circuits and signal processing.…”

Section: Introductionmentioning

confidence: 99%

“…In order to circumvent the sheet resistance variation of a polysilicon resistor used in the conventional voltage-to-current converters [4], a resistorless all-metal oxide semiconductor (MOS) voltage-to-current converter was presented [3]. The resistor employed in the conventional voltage-to-current converter is replaced with two MOS transistors, one of which is operating in the linear region and the other in the saturation region.…”

Section: Introductionmentioning

confidence: 99%

“…Although the drain currents in each of the MOS transistors are nonlinear functions of the input voltage, their sum is made to be linear over a wide range of input voltages. Because NMOS transistors are adopted in the resistor-replacement and voltage level shifting, the linearity of the voltage-to-current converter is degraded substantially by the body effect of one of the transistors [3]. The accuracy of the voltage-to-current converter is further limited by the relatively simplified modeling equations employed.…”

Section: Introductionmentioning

confidence: 99%

“…Summary performance comparison of the voltage-to-current converter and the converters proposed in[3],[7], and[9] …”

mentioning

confidence: 99%

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A Linear CMOS Voltage-to-Current Converter

Chen

Lin

2006

Circuits Syst Signal Process

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An improved complementary metal oxide semiconductor (CMOS) voltage-tocurrent converter is presented. PMOS transistors are employed in the resistor-replacement and voltage-level shifting of the proposed converter to avoid the body effect. To accurately annihilate the nonlinear voltage terms, a better modeling of the drain-to-source current of the MOS transistor operating in the linear region is essential and is adopted. Specifically, the substrate-bias effect of the MOS transistor is treated more accurately in our design. Consequently, the nonlinearity of the large-signal transconductance of the converter is reduced. The voltage-to-current converter is designed and fabricated in a 0.35 µm CMOS technology. The fabricated circuit occupies an area of 267 µm×197 µm (≈0.053 mm 2 ) and dissipates 3.92 mW from a 3.3 V supply. The measured and simulated data are in good agreement. For a 1 V P−P input voltage, the measured total harmonic distortion (THD) of the output current is less than 1.2%.

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Section: Transistor Current Modelingmentioning

confidence: 99%