Abstract:Single-use disposable nonvolatile memory devices hold promise for novel applications in internet of everything (IoE) technology by storing the health status of individual humans in daily life. However, conventional memory devices are not disposable because they are mostly composed of non-renewable, non-biodegradable and sometimes toxic materials, causing serious damage to ecological systems when they are released to the environment. Here, we demonstrate an environment-friendly, disposable nonvolatile memory de… Show more
“…Optoelectronic applications requiring transparent substrates with increased thermal stability (up to 150 °C) have prompted the development of cellulose nanofibril (CNF) paper . Over the past 10 years, many electronic devices have been prepared on nanocellulose paper including solar cells, transistors, light‐emitting devices, memory storage, touch screens, and blue‐to‐colorless electrochromic devices (ECDs). The performance of these CNF‐based devices has approached the contrast and switching speed of ECDs constructed using smooth, nonporous commodity polymer substrates.…”
As environmental considerations for both the processing and disposal of electronic devices become increasingly important, the ability to replace plastic and glass substrates with bioderived and biodegradable materials remains a major technological goal. Here, the use of cellulose nanofiber-coated paper is explored as an environmentally benign substrate for preparing low-resistance (460 Ω sq −1 ), colorless (a* = −2.3, b* = −2.7) printed poly-(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes. The PEDOT:PSS/paper electrodes support the reversible oxidation of three electrochromic polymers (ECPs) (cyan, magenta, and yellow), affording the possibility for fully printed, color displays on paper. Lateral electrochromic devices (ECDs) incorporating an ion gel electrolyte are demonstrated where a magenta-to-colorless device achieves a color contrast (ΔE*) of 56 owing to a highly color-neutral bleached state of the ECP (a* = −0.5, b* = 2.9). Black-tocolorless devices achieve ΔE* = 29 and are able to retain 86% of their color contrast after 9000 switches. The switching times of these lateral devices are quantified through colorimetric image analysis which shows comparable performance for devices constructed on paper as devices using ITO/glass electrodes (10 Ω sq −1 ). The paper ECDs are then combusted in air leaving 3% of the initial mass at 600 °C, highlighting this approach as a promising route toward disposable displays. Figure 2. Optimization of printed electrodes showing a) reflectance as a function of sheet resistance for printed electrodes on glass, CNF coated paper, and office paper. Photographs of PEDOT:PSS electrodes on CNF coated paper with sheet resistances of b) 5000 Ω sq −1 , c) 460 Ω sq −1 , d) 160 Ω sq −1 , and e) 109 Ω sq −1 . CIELAB color coordinates are labeled below each image. www.afm-journal.de www.advancedsciencenews.com 1903487 (4 of 11)
“…Optoelectronic applications requiring transparent substrates with increased thermal stability (up to 150 °C) have prompted the development of cellulose nanofibril (CNF) paper . Over the past 10 years, many electronic devices have been prepared on nanocellulose paper including solar cells, transistors, light‐emitting devices, memory storage, touch screens, and blue‐to‐colorless electrochromic devices (ECDs). The performance of these CNF‐based devices has approached the contrast and switching speed of ECDs constructed using smooth, nonporous commodity polymer substrates.…”
As environmental considerations for both the processing and disposal of electronic devices become increasingly important, the ability to replace plastic and glass substrates with bioderived and biodegradable materials remains a major technological goal. Here, the use of cellulose nanofiber-coated paper is explored as an environmentally benign substrate for preparing low-resistance (460 Ω sq −1 ), colorless (a* = −2.3, b* = −2.7) printed poly-(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes. The PEDOT:PSS/paper electrodes support the reversible oxidation of three electrochromic polymers (ECPs) (cyan, magenta, and yellow), affording the possibility for fully printed, color displays on paper. Lateral electrochromic devices (ECDs) incorporating an ion gel electrolyte are demonstrated where a magenta-to-colorless device achieves a color contrast (ΔE*) of 56 owing to a highly color-neutral bleached state of the ECP (a* = −0.5, b* = 2.9). Black-tocolorless devices achieve ΔE* = 29 and are able to retain 86% of their color contrast after 9000 switches. The switching times of these lateral devices are quantified through colorimetric image analysis which shows comparable performance for devices constructed on paper as devices using ITO/glass electrodes (10 Ω sq −1 ). The paper ECDs are then combusted in air leaving 3% of the initial mass at 600 °C, highlighting this approach as a promising route toward disposable displays. Figure 2. Optimization of printed electrodes showing a) reflectance as a function of sheet resistance for printed electrodes on glass, CNF coated paper, and office paper. Photographs of PEDOT:PSS electrodes on CNF coated paper with sheet resistances of b) 5000 Ω sq −1 , c) 460 Ω sq −1 , d) 160 Ω sq −1 , and e) 109 Ω sq −1 . CIELAB color coordinates are labeled below each image. www.afm-journal.de www.advancedsciencenews.com 1903487 (4 of 11)
“…RRAM material classification example diagram. (Reproduced under a Creative Commons Attribution 4.0 International License [21,22,82a]. Copyright 2016, 2015, 2017, Springer Nature.…”
Section: Materials For Rrammentioning
confidence: 99%
“…However, the stability of organic materials, which leads to high SET/RESET voltage, power consumption, and dispersed voltage distribution characteristics of RRAM devices, needs to be further strengthened, and the supply of materials is also a problem that needs to be resolved. [19][20][21][22][28][29][30][31][32][33][34][35][36][37] On the other hand, inorganic materials can be manufactured by simple processes, show stable performance, have low cost, and are receiving extensive attention from researchers. We mainly introduce solid electrolyte, oxides, and low-dimension system of the inorganic resistive switching materials.…”
Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory (RRAM) gradually enters the field of view due to its simple structure, fast program/erase speed, low power consumption, and so on. This review article summarizes the materials, filament mechanisms, performance optimization, and application prospects of RRAM structures to provide readers with a reference for future investigation. The filament mechanisms, which involve the electrochemical metallization mechanism (ECM), valence change mechanism (VCM), and thermochemical mechanism (TCM), of RRAM devices are particularly highlighted. The parameters that determine the RRAM characteristics such as operating voltages, ON/OFF ratio, endurance, and data retention are improved by incorporating the three methods: 1) “interface engineering”, 2) element doping of functional materials, and 3) introduction of low‐dimensional materials. In the last section, a brief introduction to the future RRAM application prospects and challenges is provided.
“…[1][2][3][4][5][6] Over the last decades, the resistive switching (RS) phenomenon has been discovered in a variety of materials, such as metal oxides, [7][8][9] chalcogenides, [10,11] nitrides, [12] organics, [13][14][15] and others. [16][17][18][19][20][21] The formation and rupture of metal (electrochemical metallization mechanism [ECM]) or oxygen vacancy (valence change mechanism [VCM]) conductive filament (CF) are generally considered as the RS mechanism. [22][23][24][25][26] Thus, it can be predicted that the RS parameters (or even performance) mainly depend on the formation/rupture location, size, and microstructure of CFs.…”
Herein, the influence of nano‐graphite clusters on amorphous carbon‐based memories reliability is studied in detail. The size of nano‐graphite clusters is effectively controlled through vacuum annealing process, which is experimentally verified by Raman spectra. Taking advantage of the local electric‐field enhancement around the nano‐graphite clusters, the relative fluctuation of high‐resistance state/low‐resistance state (HRS/LRS) and SET/RESET voltage reduce from 66.5%/41.2% to 25.3%/19.7% and 43.2%/21.4% to 18.8%/15.4%, respectively. In addition, highly reliable write‐once‐read‐many (WORM) memories with excellent anti‐interference and high temperature (300 °C) retention capacity are also prepared thanks to the electrical modulating characteristic of graphite clusters to amorphous carbon (a‐C) film.
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