All Nonmetal Resistive Random Access Memory

Yen, Te Jui; Gismatulin, A. A.; Володин, В. А.; Gritsenko, V. A.; Chin, Albert

doi:10.1038/s41598-019-42706-9

Cited by 31 publications

(18 citation statements)

References 27 publications

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“…Owing to the insulating properties of the metal-oxide layer, the initial RS layer prohibits current from flowing between the TE and the BE, thus necessitating a forming process that introduces arbitrary defects into the resistance change characteristics. The forming process induces the soft breakdown of the initial RS layer by applying a strong electric field to the TE, creating oxygen vacancies (i.e., lattices in which oxygen ions are separated) and contributing to the formation of a CF through which electrons move [ 16 , 17 , 18 , 19 , 20 ]. At this point, an appropriate compliance current ( I C ) must be set to prevent the hard breakdown of the RS layer.…”

Section: Resultsmentioning

confidence: 99%

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

Jeon

Cho

2021

Sensors

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This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gate (CG) and a sensing gate (SG), each with a resistive switching (RS) memory connected, and a floating gate (FG) that modulates the channel conductance of the a-IGZO TFT. The resistive coupling between the RS memories connected to the CG and SG produces sensitivity properties that considerably exceed the limit of conventional ion-sensitive field-effect transistor (ISFET)-based sensors. The resistances of the embedded RS memories were determined by applying a voltage to the CG–FG and SG–FG structures independently and adjusting the compliance current. Sensors constructed using RS memories with different resistance ratios yielded a pH sensitivity of 50.5 mV/pH (RCG:RSG = 1:1), 105.2 mV/pH (RCG:RSG = 2:1), and 161.9 mV/pH (RCG:RSG = 3:1). Moreover, when the RCG:RSG = 3:1, the hysteresis voltage width (VH) and drift rate were 54.4 mV and 32.9 mV/h, respectively. As the increases in VH and drift rate are lower than the amplified sensitivity, the sensor performs capably. The proposed device is viable as a versatile sensing device capable of detecting various substances, such as cells, antigens, DNA, and gases.

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Section: Resultsmentioning

confidence: 99%

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

Jeon

Cho

2021

Sensors

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“…In this case, higher voltages were used than DC switching cases because the energy to disrupt the covalent SiO x bonds equals to the multiplication of I, V, and time. The resistance ratio between HRS and LRS decreased after increasing the pulsed cycles; however, the device exhibited excellent endurance with a resistance window of 89 after 10 5 pulsed switching cycles [33].…”

Section: Memristor Effects In Sio X Filmsmentioning

confidence: 95%

Silicon Nanocrystals and Amorphous Nanoclusters in SiO_x and SiN_x: Atomic, Electronic Structure, and Memristor Effects

Володин¹,

Gritsenko²,

Gismatulin³

et al. 2020

Nanocrystalline Materials

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Semiconductor nanocrystals in dielectric films are interesting from fundamental aspect, because quantum-size effects in them appear even at room temperature, so such objects can be called as "quantum dots". Silicon nanocrystals and amorphous silicon nanoclusters in substoichiometric SiO x and SiN x films are traps for electrons and holes that apply in nonvolatile memory devices. In this chapter the formation of silicon nanocrystals and silicon amorphous nanoclusters in SiO x and SiN x films was studied using structural and optical methods. The phonon confinement model was refined to obtain sizes of silicon nanocrystals from analysis of Raman scattering data. Structural models that lead to nanoscale potential fluctuation in amorphous SiO x and SiN x are considered. A new structural model which is intermediate between random mixture and random bonding models is proposed. Memristor effects in SiO x films are discussed.

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“…Resistance switching behaviors are highly related to the materials of switching layer and electrodes. Numerous materials can serve as resistance switching layers, such as AlO x [8], HfO x [9], GeO x [10,11], TiO 2 [12], SiO x [13], and SiN x [14][15][16]. However, the resistance state is distributed randomly and difficult to control.…”

Section: Introductionmentioning

confidence: 99%

Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

2021

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Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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All Nonmetal Resistive Random Access Memory

Cited by 31 publications

References 27 publications

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

Silicon Nanocrystals and Amorphous Nanoclusters in SiO_x and SiN_x: Atomic, Electronic Structure, and Memristor Effects

Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

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All Nonmetal Resistive Random Access Memory

Cited by 31 publications

References 27 publications

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

Silicon Nanocrystals and Amorphous Nanoclusters in SiOx and SiNx: Atomic, Electronic Structure, and Memristor Effects

Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

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Silicon Nanocrystals and Amorphous Nanoclusters in SiO_x and SiN_x: Atomic, Electronic Structure, and Memristor Effects