1998
DOI: 10.1049/el:19980237
|View full text |Cite
|
Sign up to set email alerts
|

All-optical oscillator based on the anti-parallelconnection of two GaAs/AlGaAs multiple shallow quantum well PINIP diodes

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2002
2002
2002
2002

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 4 publications
0
1
0
Order By: Relevance
“…They also show strong potential of high packing density because the NOBDs are electrically independent of each other. [25][26][27][28][29][30] Using these devices, we also designed and fabricated multiply interconnected GaAs/AlGaAs shallow quantum wells (MSQWs) p-i-n-i-p type diodes and have found them highly useful in realizing totally non-biased all-optical bistable devices and all-optical oscillators. [25][26][27][28][29][30] A pair of two oppositely polarized p-i-n type diode and n-i-p type diode were monolithically integrated, in which the two intrinsic regions were made of extremely shallow quantum well layers.…”
Section: Multiply Interconnected Quantum Well Optical Devicesmentioning
confidence: 99%
“…They also show strong potential of high packing density because the NOBDs are electrically independent of each other. [25][26][27][28][29][30] Using these devices, we also designed and fabricated multiply interconnected GaAs/AlGaAs shallow quantum wells (MSQWs) p-i-n-i-p type diodes and have found them highly useful in realizing totally non-biased all-optical bistable devices and all-optical oscillators. [25][26][27][28][29][30] A pair of two oppositely polarized p-i-n type diode and n-i-p type diode were monolithically integrated, in which the two intrinsic regions were made of extremely shallow quantum well layers.…”
Section: Multiply Interconnected Quantum Well Optical Devicesmentioning
confidence: 99%