2003
DOI: 10.1098/rsta.2003.1326
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All–optoelectronic continuous–wave terahertz systems

Abstract: We discuss the optoelectronic generation and detection of continuous-wave terahertz (THz) radiation by the mixing of visible/near-infrared laser radiation in photoconductive antennas. We review attempts to reach higher THz output-power levels by reverting from mobility-lifetime-limited photomixers to transit-time-limited p-i-n photodiodes. We then describe our implementation of a THz spectroscopy and imaging-measurement system and demonstrate its imaging performance with several examples. Possible application … Show more

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Cited by 18 publications
(4 citation statements)
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“…Importantly, Hasegawa et al 43 have shown that when scanning surfaces with T-rays, they can achieve a high sensitivity to defects despite natural surface roughness. 44 This is a key finding, as it demonstrates that THz radiation outperforms visible light, which is scattered significantly by rough surfaces.…”
Section: Industrial Surface Inspection Quality Control and Process Momentioning
confidence: 84%
“…Importantly, Hasegawa et al 43 have shown that when scanning surfaces with T-rays, they can achieve a high sensitivity to defects despite natural surface roughness. 44 This is a key finding, as it demonstrates that THz radiation outperforms visible light, which is scattered significantly by rough surfaces.…”
Section: Industrial Surface Inspection Quality Control and Process Momentioning
confidence: 84%
“…20 The technology for growth, design, and characterization of the Low Temperature Grown (LT) GaAs photomixers has improved dramatically 20,21 enabling the use of CW THz systems for sensing, spectroscopy, 22,23 and imaging applications. 24,25,26,27,28 The key materials component of LT-GaAs and higher power ErAs:GaAs photomixers is the presence of nanoparticulates that reduce the charge carrier lifetime in the material to the sub-picosecond level thereby enabling optical mixing to the THz range. While there has been improvements in photomixer performance with ErAs:GaAs materials, 29 the photomixer approach has been limited by the achievable output power and device reliability.…”
Section: Thz Photomixing Systemmentioning
confidence: 99%
“…22 The technology for growth, design, and characterization of the Low Temperature Grown (LT) GaAs photomixers has improved dramatically 22,23 enabling the use of CW THz systems for sensing, spectroscopy, 15,24 and imaging applications. 25,26,27,28,29 The key materials component of LT-GaAs and higher power ErAs:GaAs photomixers is the presence of nanoparticulates that reduce the charge carrier lifetime in the material to the sub-picosecond level thereby enabling optical mixing to the THz range. While there has been improvements in photomixer performance with ErAs:GaAs materials, 30 the photomixer approach has been limited by the achievable output power and device reliability.…”
Section: Options For Imaging Modalitiesmentioning
confidence: 99%