All screen-printed 18% homogeneous emitter solar cells using high volume manufacturing equipment

Terry, Mason L.; Meisel, A.; Rosenfeld, Emma; Shah, Syed Imran Hussain; Tai, E.M.; Chen, X.; Du, Tao

doi:10.1109/pvsc.2010.5614417

Cited by 10 publications

(8 citation statements)

References 2 publications

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“…For a simulated FA BSF device, on which the isotexture would most likely be applied, optimal efficiency is attained by structures with a 1-3-μm-deep isotexture. The optimal efficiency lies just below the range of isotexture depths suggested by various experimental analyses [6], [12], [28], [29]; in each of these studies, the dependence of front surface recombination on etch depth was stronger than our measured trend, resulting in lower η at etch depths below ∼3 μm.…”

Section: Results: Impact Of Isotexture On Silicon Solar Cell Efficcontrasting

confidence: 45%

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Isotextured Silicon Solar Cell Analysis and Modeling 2: Recombination and Device Modeling

Baker-Finch

McIntosh²,

Terry

et al. 2012

IEEE J. Photovoltaics

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We extend our analysis of isotextured silicon solar cells by 1) examining experimentally the role played by isotexture in determining the surface recombination velocity at silicon surfaces and 2) combining these experimental results with our model for photogeneration in order to simulate in one dimension typical solar cell devices with isotextured surfaces. We examine both undiffused and diffused n-type isotextured silicon surfaces, and we find that the rate of surface recombination usually decreases with increasing isotexture etch depth. However, when undiffused surfaces are passivated with hydrogenated SiO 2 or SiN x , surface recombination velocity is, counterintuitively perhaps, found to be independent of surface texture-this is despite a surface area that is up to 1.9-fold larger than a planar equivalent. We demonstrate the utility of our analysis of isotextured surfaces by simulating various device structures in one dimension. In one case, where device parameters are chosen to approximate a typical screen-printed cell with full-area back surface field, simulation results indicate that the optimal isotexture etch depth is 1-3 μm. This optimum etch depth is slightly below the one deduced from published experimental results, indicating that surface recombination on samples observed in this study is uniquely independent of isotexture morphology.

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Section: Results: Impact Of Isotexture On Silicon Solar Cell Efficcontrasting

confidence: 45%

“…Recombination rates at isotextured surfaces are reported to depend on the depth of the texture etch [6]. This is perhaps not surprising, given that 1) surface area, 2) dominant surface orientation, and 3) texture feature curvature all depend on the depth of texturing.…”

Section: Recombination At Isotextured Surfacesmentioning

confidence: 94%

Isotextured Silicon Solar Cell Analysis and Modeling 2: Recombination and Device Modeling

Baker-Finch

McIntosh²,

Terry

et al. 2012

IEEE J. Photovoltaics

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“…First, it is typically hypothesised that the texture etch progressively removes a 'saw-damaged,' defect-rich near surface layer, and that more complete removal (via deeper etching) reduces surface recombination, increasing v oc and slightly reducing j sc (due to reduced collection efficiency near the surface) [1,2]. However, we note that in our previous study, recombination at isotextured surfaces was found to be relatively constant with etch depth, and hence insensitive to the impact of any possible damaged region [4].…”

Section: Industrial Isotextured Silicon Solar Cellsmentioning

confidence: 99%

“…In the case of isotextured solar cells, the trade-off is represented by a choice of texture depth, for which an optimal value can be found [1,2]. At low depths, optical properties are superior, but surface recombination is relatively large (possibly due to the enlarged surface area and high feature curvature at shallow etch depths, but also depending on the depth of a defect-rich saw damaged layer at the wafer surface).…”

Section: Introductionmentioning

confidence: 99%

Modelling isotextured silicon solar cells and modules

Baker-Finch

McIntosh²,

Terry

2012

2012 38th IEEE Photovoltaic Specialists Conference

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We describe a one dimensional model for isotextured silicon solar cells.Combined optical and recombination analyses provide the tools required to predict the performance of isotextured cells; the utility of these tools is demonstrated by comparison with industrially fabricated screenprinted cells with full area back surface field. In this particular demonstration, inaccurate predetermination of front surface recombination reduces the predictive capability of the model. We measure the angular distribution of light from isotextured surfaces, showing that, when encapsulated with typical pottants beneath glass, current generation in isotextured cells approaches 99% of that achieved in random pyramid textured equivalents. This represents a reduction in the performance difference between the two textures when operating in air (not encapsulated); in this case, current generation in an isotextured device is 96% of that calculated beneath random pyramids. We calculate the short circuit current of photovoltaic modules comprising cast-mono silicon solar cells; when encapsulated beneath glass and EVA, isotexturing, rather than alkaline etching, maximises photogeneration in cells with less than 84% monocrystalline (<100>) surface area.

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“…The standard texturing scheme for this material is therefore independent of crystal orientations. When choosing the etching duration for the isotexture, a trade-off must be sought between reflectivity and surface recombination velocity [107]. Removing only a little material allows the realisation of optically good textures, but is found to be moderate.…”

Section: Effects Implied By Other Texturing Processes On Multicrystalmentioning

confidence: 99%

Nanoimprint lithography for solar cell texturisation

et al. 2010

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The highest efficiency silicon solar cells are fabricated using defined texturing schemes by applying etching masks. However, for an industrial production of solar cells the usage of photolithographic processes to pattern these etching masks is too consumptive. Especially for multicrystalline silicon, there is a huge difference in the quality of the texture realized in high efficiency laboratory scale and maskless industrial scale fabrication. In this work we are describing the topography of a desired texture for solar cell front surfaces. We are investigating UV-nanoimprint lithography (UV-NIL) as a potential technology to substitute photolithography and so to enable the benefits resulting of a defined texture in industrially feasible processes. Besides the reduced process complexity, UV-NIL offers new possibilities in terms of structure shape and resolution of the generated etching mask. As mastering technology for the stamps we need in the UV-NIL, interference lithography is used. The UV-NIL process is conducted using flexible UV-transparent stamps to allow a full wafer process. The following texturisation process is realized via crystal orientation independent plasma etching to tap the full potential of the presented process chain especially for multicrystalline silicon. The textured surfaces are characerised optically using fourier spectroscopy

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All screen-printed 18% homogeneous emitter solar cells using high volume manufacturing equipment

Cited by 10 publications

References 2 publications

Isotextured Silicon Solar Cell Analysis and Modeling 2: Recombination and Device Modeling

Isotextured Silicon Solar Cell Analysis and Modeling 2: Recombination and Device Modeling

Modelling isotextured silicon solar cells and modules

Nanoimprint lithography for solar cell texturisation

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