All-silicon thermoelectric micro/nanogenerator including a heat exchanger for harvesting applications

Noyan, Inci Dönmez; Dolcet, Marc; Salleras, M.; Stranz, A.; Calaza, C.; Gadea, Gerard; Pacios, Mercè; Morata, Álex; Tarancón, Albert; Fonseca, L.

doi:10.1016/j.jpowsour.2018.12.029

Cited by 29 publications

(22 citation statements)

References 17 publications

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“…1C-F). The micro-devices were fabricated in cleanroom facilities by means of series of photolithography, metal evaporation and wet and dry etching microfabrication steps [17]. Fabrication and architecture are described in detail in Supplementary Info sections 2 and 3.…”

Section: Methodsmentioning

confidence: 99%

“…1. These settings were optimized for achieving a high ZT and enabling scalable integration in Si-based thermoelectric generators [16,17,33]. NWs grew epitaxially following the <111> directions of the Si of the trenches, allowing the integration of large number of NWs in parallel, with a density of 1-5 NWs/µm 2 ( Fig.…”

Section: Si Nw Growth and Microstructural Characterizationmentioning

confidence: 99%

“…The bottom-up approach employed by Fonseca and co. [13][14][15] tackles contact, embedding and scalability issues, allowing growth and integration of dense arrays of suspended NWs in arbitrarily deep micro-trenches of thermoelectric devices in a single CVD step. Moreover, these devices are able to naturally set up a temperature difference across the NWs when placed on top of hot surfaces exposed to air, generating useful power from waste heat [16,17], while results often reported in literature for micro-TEG devices usually force a temperature difference with a heater, making difficult to ascertain an enhanced thermal performance [10,11,15,18].…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we report the complete thermoelectric characterization (ZT) of p-type Si NWs epitaxially grown by a CVD bottom-up approach on silicon, which enables their direct integration and usage in functional micro-TEG devices [14,16,17,25]. Electrical (σ) and thermal () conductivities were measured in the very same single nanowire by using the DC selfheating method [26,27].…”

Section: Introductionmentioning

confidence: 99%

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Enhanced thermoelectric figure of merit of individual Si nanowires with ultralow contact resistances

et al. 2020

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Low-dimensional silicon-based materials have shown a great potential for thermoelectric applications due to their enhanced figure of merit ZT and high technology compatibility. However, their implementation in real devices remains highly challenging due to the associated large contact resistances (thermal and electrical). Herein we demonstrate ultralow contact resistance silicon nanowires epitaxially grown on scalable devices with enhanced ZT. Temperature dependent figure of merit was fully determined for monolithically integrated individual silicon nanowires achieving a maximum value of ZT = 0.2 at 620 K. Sidewise, this work accounts for the first time nearly zero thermal and electrical contact resistances in monolithically integrated bottom-up nanowires.

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Section: Methodsmentioning

confidence: 99%

Section: Si Nw Growth and Microstructural Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhanced thermoelectric figure of merit of individual Si nanowires with ultralow contact resistances

et al. 2020

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“…Device architecture is usually based on the conventional square design used for bulk TEGs [18][19][20][21]. However, by using thin-film fabrication methods a wide range of different designs are possible; for instance cylindrical thermoelements [10,22], planar generators [23][24][25][26] and Y-type structures [27,28].…”

Section: Introductionmentioning

confidence: 99%

Mathematical model and optimization of a thin-film thermoelectric generator

et al. 2019

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The thriving of the Internet of Things is set to increase the demand for low-power wireless sensing devices. Thin-film thermoelectric generators are ideal as a sustainable power source for Internet of Things devices as they allow for low maintenance and energy autonomy. This work presents a model to estimate the performance of a thin-film thermoelectric generator. Verified by finite-element method simulation, the results from the model show that increasing the interconnect electrical conductivity and reducing the device pitch increases the power density. The power density can also be increased by increasing the fill factor and reducing the thermal conductivity of the insulating materials. A new corrugated thin-film thermoelectric generator design is proposed in this work that allows for higher fill factors than conventional square designs where a limit on the minimum feature size is imposed, as is the case with photolithography.

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Tuning the Thermoelectric Properties of Boron‐Doped Silicon Nanowires Integrated into a Micro‐Harvester

Gordillo

Estrada‐Wiese

Duque‐Sierra

et al. 2022

Adv Materials Technologies

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All-silicon thermoelectric micro/nanogenerator including a heat exchanger for harvesting applications

Cited by 29 publications

References 17 publications

Enhanced thermoelectric figure of merit of individual Si nanowires with ultralow contact resistances

Enhanced thermoelectric figure of merit of individual Si nanowires with ultralow contact resistances

Mathematical model and optimization of a thin-film thermoelectric generator

Tuning the Thermoelectric Properties of Boron‐Doped Silicon Nanowires Integrated into a Micro‐Harvester

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