2018
DOI: 10.1002/adfm.201804170
|View full text |Cite
|
Sign up to set email alerts
|

All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing

Abstract: Electronic synaptic devices are important building blocks for neuromorphic computational systems that could go beyond the constraints of von Neumann architecture. Although two-terminal memristive devices have been demonstrated to be possible candidates, they suffer from several shortcoming related to the filament formation mechanism including non-linear switching, write noise, and high device conductance, all of which limit the accuracy and energy efficiency. Electrochemical three-terminal transistors, in whic… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

12
386
1

Year Published

2019
2019
2020
2020

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 383 publications
(399 citation statements)
references
References 54 publications
12
386
1
Order By: Relevance
“…[108][109][110][111] In addition, electrochemical random-access memory (ECRAM) based on ion intercalation has recently been reported as a promising synaptic cell, showing multi-states and incremental switching with near-ideal switching symmetry and linearity. [29,[112][113][114][115][116][117][118][119] The electrochemically driven ion intercalation process is more controllable than filament-related ion movements in RRAM; therefore, ECRAM also exhibits a much smaller stochasticity. In addition, by borrowing the battery concept, those devices successfully decouple the read and write operations and thus realize low programming energy and long retention time simultaneously.…”
Section: Artificial Synapsesmentioning
confidence: 99%
“…[108][109][110][111] In addition, electrochemical random-access memory (ECRAM) based on ion intercalation has recently been reported as a promising synaptic cell, showing multi-states and incremental switching with near-ideal switching symmetry and linearity. [29,[112][113][114][115][116][117][118][119] The electrochemically driven ion intercalation process is more controllable than filament-related ion movements in RRAM; therefore, ECRAM also exhibits a much smaller stochasticity. In addition, by borrowing the battery concept, those devices successfully decouple the read and write operations and thus realize low programming energy and long retention time simultaneously.…”
Section: Artificial Synapsesmentioning
confidence: 99%
“…www.advelectronicmat.de be utilized to mimic LTP with forgetting effect, [159,[161][162][163] STP to LTP transformation, [157,160,[164][165][166][167][168][169][170] metaplasticitry, [112,[171][172][173][174][175] and triplet-STDP. [176][177][178] The device structure, size, switching performance, and emulated synaptic plasticity of the representative memristive devices are summarized in Table 1.…”
Section: Memristive Synapsesmentioning
confidence: 99%
“…three-terminal device, [168] and the transformation from STP to LTP can be achieved by increasing the stimuli amplitude and duration (see Figure 11d). …”
Section: Wwwadvelectronicmatdementioning
confidence: 99%
See 1 more Smart Citation
“…[23][24][25] Among all IST-based synapse devices, Li + ion-based synapse transistor (LIST) shows better synaptic property because of high reversibility and ultra-high stability of Li + ion under electrolyte gating. [27,28] Polymer-based solid-state electrolyte systems give better control over OCP and stability, but patterning of top gate architecture with PEO: LiClO 4 electrolyte is challenging since they are soluble in a commonly used lithographic solvent. More recently, lithium phosphorus oxynitride (LiPON) was proposed as a solid electrolyte for the synaptic device.…”
Section: Introductionmentioning
confidence: 99%