All-solution-processed nonvolatile flexible nano-floating gate memory devices

Abstract

Organic semiconductors have great potential for future electronic applications owing to their inherent flexibility, low cost, light weight and ability to easily cover large areas. However, all of these advantageous material properties can only be harnessed if simple, cheap and low-temperature fabrication processes, which exclude the need for vacuum deposition and are compatible with flexible plastic substrates, are employed. There are a few solution-based techniques such as spin-coating and inkjet printing that meet the above criteria. In this paper, we describe a novel all-solution-processed nonvolatile memory device fabricated on a flexible plastic substrate. The source, drain and gate electrodes were printed using an inkjet printer with a conducting organic solution, while the semiconducting layer was spin-coated with an n-type polymer. The charge-trapping layer was composed of spin-coated reduced graphene oxide (rGO), which was prepared in the form of a solution using Hummer's method. The fabricated device was characterized in order to confirm the memory characteristics. Device parameters such as threshold voltage shift, retention/endurance characteristics, mechanical robustness and reliability upon bending were also analyzed.

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

“…Graphene is widely used in various nonvolatile memories due to its planar atomic structure and superlative electronic and physical properties . Kim et al fabricated an all solution‐processable organic flexible nonvolatile memory based on a n‐type semiconductor which is abbreviated as[P(NDI2OD‐T2)] and reduced graphene oxide (rGO) as nanofloating gate. All the electrodes were fabricated with poly(3,4‐ethylene‐dioxythiophene) (PEDOT):poly(styrenesulfonate) (PSS) solution by the inkjet printing method.…”

A facile approach to synthesize an oxo-functionalized graphene/polymer composite for low-voltage operating memory devices

“…In this way, a memory operation can be realized and this concept has been widely used in memory devices. [12][13][14][15][16][17][18][19][20] The device fabrication is based on a shadow mask approach; a detailed step-by-step illustration can be found in Figure S12. The gate, source, and drain electrodes, as well as the organic semiconductor layer are prepared in a thermal evaporator.…”

High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

“…In addition to excellent charge trapping capability, optical transparency is another desirable feature for OFET memory 23 24 25 26 . In general, electronic devices with optical transparency provide the advantages for transparent electronics, such as smart glass electronic devices and wearable displays.…”