2016
DOI: 10.1016/j.nanoen.2016.09.009
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All vapor-deposited lead-free doped CsSnBr3 planar solar cells

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Cited by 162 publications
(108 citation statements)
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“…[12,13] In an attempt to improve the PCE, research efforts have been directed towards optimization of the tin-perovskite film morphology, tuning the film composition, use of a reducing agent, and modification of the device structure. [14][15][16][17][18][19][20][21] The main challenges for further improving the PCE lie in preventing the easy formation of Sn vacancies due to their small formation energy and the fast oxidation of divalent Sn 2+ into more stable Sn 4+ . This causes high levels of self-p-doping in Sn-based perovskite films, with consequent severe recombination losses for charge carriers.…”
Section: Doi: 101002/aenm201702019mentioning
confidence: 99%
See 1 more Smart Citation
“…[12,13] In an attempt to improve the PCE, research efforts have been directed towards optimization of the tin-perovskite film morphology, tuning the film composition, use of a reducing agent, and modification of the device structure. [14][15][16][17][18][19][20][21] The main challenges for further improving the PCE lie in preventing the easy formation of Sn vacancies due to their small formation energy and the fast oxidation of divalent Sn 2+ into more stable Sn 4+ . This causes high levels of self-p-doping in Sn-based perovskite films, with consequent severe recombination losses for charge carriers.…”
Section: Doi: 101002/aenm201702019mentioning
confidence: 99%
“…Therefore, attempts to reduce the background carrier (hole) density have been made by incorporating SnF 2 into such films to fill tin vacancies and suppress oxidation of Sn 2+ . [14][15][16][17] For example, Mathews and co-workers reported the use of cesium tin iodide (CsSnI 3 ) and formamidinium tin iodide (FASnI 3 ) as light absorbers in an The low power conversion efficiency (PCE) of tin-based hybrid perovskite solar cells (HPSCs) is mainly attributed to the high background carrier density due to a high density of intrinsic defects such as Sn vacancies and oxidized species (Sn 4+ ) that characterize Sn-based HPSCs. Herein, this study reports on the successful reduction of the background carrier density by more than one order of magnitude by depositing near-single-crystalline formamidinium tin iodide (FASnI 3 ) films with the orthorhombic a-axis in the out-of-plane direction.…”
Section: Doi: 101002/aenm201702019mentioning
confidence: 99%
“…[141] Specially, with regard to Sn 2+ -containing perovskite NCs (e.g., CsSnX 3 ) and related devices, progress was strongly hampered by the transforming from Sn 2+ to Sn 4+ because Sn 2+ can easily be oxidized into Sn 4+ under ambient conditions. An in-situ protective strategy including introduction of reducing reagent such as tri-n-octylphosphine and hypophosphorous acid, [72,142] as well as additives like SnF 2 and SnBr 2 , [143][144][145][146] can improve the oxygen resistance and increase the stability under operating conditions. [64,110,142] In this case, the conventional coating technique to great extent cannot work efficiently.…”
Section: Stability Issuesmentioning
confidence: 99%
“…Mixed-halide and mixed-cation perovskites have been investigated to address these issues. [23,[33][34][35][37][38][39][40] In addition, the easy oxidation of Sn and Ge from the +2 state to the +4 state due to their high energy 5s and 4s orbitals makes them less promising for application in stable and long-term PSCs. However, the device performance through this approach has fallen short of the Pb-based ones.…”
mentioning
confidence: 99%