Alloy-assisted Auger recombination in InGaN

Abstract

Àíîòàöiÿ. ×èñåëüíî äîñëiäaeåíî åôåêò àòîìíî¨íåâïîðÿäíîâàíîñòi íà øâèäêiñòü îaeå-ðåêîìáiíàöi¨â ñïîëóêàõ n-InGaN òèïó âþðöèòó. Ðîçðàõóíêè áóëè ïðîâåäåíi äëÿ 256-àòîìíîí àäêîìiðêè, ùî âêëþ÷๠â ñåáå In òà Ga àòîìè, âèïàäêîâî ðîçìiùåíi ïî âóçëàõ íàäêîìiðêè, çàáåçïå÷óþ÷è íåîáõiäíèé ñòåõiîìåòðè÷íèé ñêëàä ñïîëóêè. Ïîâíà çîííà ñòðóêòóðà i íåîäíîðiäíà ñiòêà k-òî÷îê áóëè âèêîðèñòàíi äëÿ ïiäâèùåííÿ òî÷íîñòi ðîçðàõóíêiâ. Ìè ïîêàçàëè, ùî âåëèêå ÷èñëî ìiaeçîííèõ ðåêîìáiíàöiéíèõ ïåðåõîäiâ, ùî âiäáóâàþòüñÿ âíàñëiäîê ïîðóøåííÿ òðàíñëÿöiéíî¨ïåðiîäè÷íîñòi, âiäiãð๠êëþ÷îâó ðîëü â øèðîêîçîííèõ InGaN ñïîëóêàõ. Êîåôiöi¹íòè îaeå-ðåêîìáiíàöi¨äëÿ öèõ ñïîëóê çíàõîäÿòüñÿ â ìåaeàõ 1.0 • 10 −32 − 4.7 • 10 −31 cì 6 / ñ.

Influence of Atomic Disorder on the Auger Recombination Rate in p-InGaN Alloys

“…For the sake of comparison, Fig. 2 also demonstrates the results of calculations for the Auger recombination coefficient in -InGaN, which were obtained in our work [9]. It is evident that the influence of an atomic disorder is relatively larger in the -type nitrides than in the -type materials.…”

“…1, ) testifies that a reduction in the translational fre- = 300 K and = 10 18 cm −3 . Analogous dependences obtained in work [9] for -InGaN compounds are also shown for comparison (hollow symbols) quency owing to the atomic disorder leads to the formation of additional energy states both in the conduction and valence bands. As a result, the Auger transitions, which were forbidden in the virtual-crystal model, become allowed in real compounds.…”

“…However, the latter does not make allowance for the influence of a crystal disorder on the energy band structure and the wave functions of free charge carriers. At present, we know only two papers in which the effect of a structure disorder on the Auger recombination rate in In Ga 1− N compounds was estimated numerically [8,9]. In work [8], a special quasirandom 32-atom In 0.25 Ga 0.75 N structure was used to simulate ternary nitride compounds with an arbitrary stoichiometric composition.…”

“…In work [8], a special quasirandom 32-atom In 0.25 Ga 0.75 N structure was used to simulate ternary nitride compounds with an arbitrary stoichiometric composition. A more general approach was used in work [9], where every compound was modeled in the form of a large supercell with a random atomic distribution. However, the analysis in work [9] concerned only compounds of the -type.…”

“…A more general approach was used in work [9], where every compound was modeled in the form of a large supercell with a random atomic distribution. However, the analysis in work [9] concerned only compounds of the -type.…”