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Kim, Hong-Sung; Yong, Yoon-Joong; Lee, Jun Young; Lee, Ki-Young

doi:10.1023/a:1018517905813

Cited by 3 publications

(2 citation statements)

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“…Usually annealing is used for such purposes. 27,28 In our case Ni 2 Si most likely is formed due to suitable energetic conditions such as an external electric field and contact potential at the solution/PS interface. From the other hand the energy of the electrochemical system was not enough to provide to the following NiSi and NiSi 2 formation as there were no any related peaks on the XRD patterns.…”

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confidence: 77%

“…26 In our opinion, a-Si represents a favorable material for the Ni diffusion even at room temperature as Ni ions have been found to easily diffuse into Si on its defects. 27 We suppose that an external electric field provides the concentration of Ni ions near the surface of pore's walls and their further diffusion into the skeleton of PS. However additional energy is required to provide the conversion of the PS surface enriched with Ni ions into nickel silicide.…”

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confidence: 99%

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Electrochemical Deposition and Characterization of Ni in Mesoporous Silicon

Dolgiy

Redko

Bandarenka

et al. 2012

J. Electrochem. Soc.

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Nickel nanowires have been formed by stationary electrochemical deposition of nickel into mesoporous silicon templates from the modified Watts bath. Monitoring of the porous silicon potential during the electrochemical deposition has given the determination of the emergence of Ni on the outer surface of porous layer. Maximum filling factor of porous silicon with Ni has been achieved to 67%. The pore dimensions have been found to define the length and diameter of the Ni nanowires that have equaled to 10 mu m and 100-120 nm, respectively. The polycrystalline nature of the nickel nanowires, as well as the expansion of nickel lattice constant in comparison with bulk material has been established by analyzing the X-ray diffraction spectra. The synthesized samples have possessed ferromagnetic properties, which have been confirmed by temperature measurements of the magnetization. Smaller values of the specific magnetization of the Ni/PS samples and the atomic magnetic moment of Ni atoms at the low temperature with respect to those of bulk material have been suggested to be mostly caused by formation of nickel silicide at the beginning of the Ni electrochemical deposition. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.050210jes] All rights reserved

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Electrochemical Deposition and Characterization of Ni in Mesoporous Silicon

Dolgiy

Redko

Bandarenka

et al. 2012

J. Electrochem. Soc.

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Structural and magnetic properties of Ni nanowires grown in mesoporous silicon templates

et al. 2013

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MAGNETIC PROPERTIES OF Ni NANOWIRES GROWN IN MESOPOROUS SILICON TEMPLATES

Dolgiy¹,

Redko²,

Yanushkevich³

2013

Physics, Chemistry and Applications of Nanostructures

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Magnetic properties of Ni nanowires electrochemically deposited into pores of mesoporous silicon template under the stationary galvanostatic regime were investigated by measuring the temperature dependence (77-700 K) of the specific magnetization . The measured  values were lower with respect to that of bulk Ni. The Curie temperature, T C , derived from (T) for low deposition times of Ni was less (575 K) than that for bulk Ni (630 K). This is caused by dimensional effects of Ni nanoparticles.

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Cited by 3 publications

References 12 publications

Electrochemical Deposition and Characterization of Ni in Mesoporous Silicon

Electrochemical Deposition and Characterization of Ni in Mesoporous Silicon

Structural and magnetic properties of Ni nanowires grown in mesoporous silicon templates

MAGNETIC PROPERTIES OF Ni NANOWIRES GROWN IN MESOPOROUS SILICON TEMPLATES

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