AlN films deposited under various nitrogen concentrations by RF reactive sputtering

AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices

“…3b). The dense, columnar morphology with c-axis (002)-preferred crystallographic orientation, produced at low deposition pressure (0.3 Pa) and ~35% N2 gas concentration, is promoted by an increased in the mobility of adatoms and is in agreement with earlier studies on reactively sputtered AlN films [20,21]. The selected area electron diffraction pattern (SAED) of a relatively large area of an individual AlN@CNT shell/core structure ( Fig.…”

X-Ray Analysis on Ceramic Materials Deposited by Sputtering and Reactive Sputtering for Sensing Applications

“…Aluminum nitride is a semiconductor of the III-V semiconductor group, with an hexagonal wurtzite crystalline structure (Penza et al, 1995;Xu et al, 2001), lattice constants of a = 0.3110 nm e c =0.4980 nm (Xu et al, 2001), and is characterized by a broad direct energy gap (6.2 eV) (Cheng et al, 2003;Hirata et al, 2007;Penza et al, 1995), chemical stability (Cheng et al, 2003;Penza et al, 1995), high thermal conductivity (3.2 W/mK) (Cheng et al, 2003), low thermal expansion coefficient (4.5 ppm/°C) (Ruffner et al, 1999), high breakdown voltage (Hirata et al, 2007;Xu et al, 2001), high acoustic speed (Cheng et al, 2003;Xu et al, 2001), high refractive index (n = 2.1) (Penza et al, 1995), high electrical resistivity (10 11 -10 14 cm) (Ruffner et al, 1999) and, above all, good piezoelectric response (Cheng et al, 2003;Hirata et al, 2007;Penza et al, 1995;Ruffner et al, 1999;Xu et al, 2001) (piezoelectric coefficient of 5.4 pm/V) (Ruffner et al, 1999). Piezoelectric behaviour of AlN strongly depends on its crystallographic orientation (Cheng et al, 2003) and, in particular, films grown in the [002] orientation are preferred as the highest www.intechopen.com…”

“…Piezoelectric behaviour of AlN strongly depends on its crystallographic orientation (Cheng et al, 2003) and, in particular, films grown in the [002] orientation are preferred as the highest www.intechopen.com…”

Hollow cathode magnetron deposition of AlN thin films: crystalline structure and morphology

“…Recently, aluminium nitrite (AlN) film has attracted substantial attention as a promising candidate for semiconductor material, electronic material for thermal dissipation, dielectric and passivation layer, surface acoustic wave (SAW) devices and photoelectric devices [1,2]. Many techniques, such as sputtering, chemical vapour deposition and laser chemical vapour deposition, have been used to fabricate AlN thin films on various substrates.…”