AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets

Li, Hanchao; Xie, Hanlin; Xie, Qingyun; Liu, Siyu; Wang, Yue; Wang, Yuxuan; Ranjan, Kumud; Zhuang, Yihao; Gong, Xiao; Ing Ng, Geok

doi:10.1109/led.2024.3483888

IEEE Electron Device Lett.

2024

DOI: 10.1109/led.2024.3483888

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AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets

Hanchao Li,

Hanlin Xie,

Qingyun Xie

et al.

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AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets

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