AlN metal–semiconductor field-effect transistors using Si-ion implantation

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

doi:10.7567/jjap.57.04fr11

Cited by 54 publications

(36 citation statements)

References 36 publications

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“…AlN holds much promise for high-temperature and high-power applications due to its high critical electric field, wide bandgap energy and high thermal conductivity [1,2]. An AlNchannel field-effect transistor has been demonstrated recently [2]. However, there are challenges in the charge carrier mobility and contact resistances.…”

Section: Introductionmentioning

confidence: 99%

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

Lemettinen

Okumura

Kim

et al. 2018

Journal of Crystal Growth

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We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <1100 > by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1 • and 4 • miscut substrates were found to be 20000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1 • towards <1100 >. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (002) and (102) reflections, respectively. The root mean square roughness was 0.43 nm for a 2 µm × 2 µm atomic force microscope scan.

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Section: Introductionmentioning

confidence: 99%

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

Lemettinen

Okumura

Kim

et al. 2018

Journal of Crystal Growth

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“…AlN has an ultrawide direct bandgap (6.0 eV) and high thermal conductivity (>3.2 W cm À1 K À1 ), [1] and thus, has potential as a semiconductor material for deep-ultraviolet (DUV) optical devices and power devices. Much effort has gone into demonstrating AlN-based DUV light-emitting diodes (DUVLEDs), [2][3][4][5] field-effect transistors (FETs), [6][7][8] and Schottky barrier diodes (SBDs). [9,10] For DUV optical devices, there are issues with high dislocation densities in the active layer, which can significantly degrade the internal quantum efficiency (IQE) and lifetime.…”

Section: Introductionmentioning

confidence: 99%

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Goto

Takekawa

Nagashima

et al. 2020

Physica Status Solidi (a)

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Dislocation densities in AlN layers grown on c‐plane sapphire and physical vapor transport‐grown AlN (PVT‐AlN) (0001) substrates, by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE), respectively, are evaluated from the density of etch pits formed in sodium hydroxide (NaOH)/potassium hydroxide (KOH) eutectic heated to 450 °C. In the heteroepitaxial layers grown by MOVPE on the sapphire substrates, etch pits with different sizes are formed. Cross‐sectional transmission electron microscopy (TEM) observations reveal that the large, medium, and small pits, with densities of 1.4 × 106, 2.6 × 107, and 6.9 × 109 cm−2, respectively, correspond to screw, mixed, and edge dislocations, respectively. In contrast, in the homoepitaxial layers grown by HVPE on the PVT‐AlN substrates, only one kind of etch pit with uniform size corresponding to the edge dislocations is formed with a density of 103–104 cm−2. Cross‐sectional TEM observation confirms that the edge dislocations in the homoepitaxial layer propagate from the substrate through the interface, which indicates that the dislocation density does not increase during homoepitaxial growth by HVPE. The HVPE‐AlN homoepitaxial layers grown on the PVT‐AlN substrates are found to have very low dislocation density.

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“…Additionally, use of the Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N heterostructure benefits from a high-quality interface, due to almost perfect lattice matching as there is only a mild difference in aluminum content between barrier and channel layers [26]. Additionally, lower threading dislocation density is achieved through growth on AlN substrates as opposed to bare sapphire [27]. AlN has some advantages relative to GaN, as shown in Table 1, including a high breakdown electric field (12 MV/cm) and a high thermal conductivity (2.9 W/cm•K).…”

Section: Introductionmentioning

confidence: 99%

Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors

Carey

Ren

Baca

et al. 2019

IEEE J. Electron Devices Soc.

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AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation. Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N (85/70) HEMTs were operated up to 500 • C in ambient causing only 58% reduction of dc current relative to 25 • C measurement. The low gate leakage current contributed to high gate voltage operation up to +10 V under V ds = 10 V, with I ON /I OFF ratios of > 2 × 10 11 and 3 × 10 6 at 25 and 500 • C, respectively. Gate-lag measurements at 100 kHz and 10% duty cycle were ideal and only slight loss of pulsed current at high gate voltages was observed. Low interfacial defects give rise to high quality pulsed characteristics and a low subthreshold swing value of 80 mV/dec at room temperature. Herein is an analysis of AlGaN-channel HEMTs and their potential future for high power and high temperature applications. INDEX TERMS AlGaN, GaN, high electron mobility transistor (HEMT), high temperature.

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AlN metal–semiconductor field-effect transistors using Si-ion implantation

Cited by 54 publications

References 36 publications

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors

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AlN metal–semiconductor field-effect transistors using Si-ion implantation

Cited by 54 publications

References 36 publications

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

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Product

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Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors