AlN passivation effect on Au/GaN Schottky contacts

Kim, Hogyoung; Kwon, Y. J.; Choi, Byung Joon

doi:10.1016/j.tsf.2018.12.008

Cited by 11 publications

(4 citation statements)

References 35 publications

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“…Hence, the interfacial oxide layer causing charge trapping might be formed during the ALD process. Furthermore, our recent work has shown the effective passivation effect on GaN Schottky contacts using 2 nm thick AlN, which was associated with the generation of many Al-O-N bonds near the AlN/GaN interface [45]. As a result, it can be speculated that the formation of the oxidized transition layer near the AlGaN/GaN interface was suppressed for sample A compared with other samples.…”

Section: Resultsmentioning

confidence: 94%

Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes

Kim

Choi

2020

Coatings

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Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. Under low reverse bias condition, the sample with the pulse ratio of 2:1 was explained by Poole–Frenkel emission and the negative temperature dependence for the sample with the pulse ratio of 1:2 was associated with the acceptor levels in the AlGaN layer. Fast interface traps at 0.24–0.29 eV were observed for the samples with the pulse ratios of 1:1 and 1:2, whereas bulk traps at ~0.34 eV were observed for the sample with the pulse ratio of 2:1. Higher trap densities were obtained from the C–V hysteresis measurements when the pulse ratios were 1:1 and 1:2, indicating the presence of a charge trapping interfacial layer. According to the X-ray photoelectron spectroscopy spectra, the pulse ratio of 2:1 was found to have less oxygen-related defects in the AlGaN layer.

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Section: Resultsmentioning

confidence: 94%

Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes

Kim

Choi

2020

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“…[110][111][112][263][264][265] Since the beginning of 2000s, use of the ALD method has continuously increased in semiconductor industry. [269][270][271][272][273][274][275][276][277][278][279][280][281][282][283][284][285][286][287][288] It can be also predicted that ALD will become even more popular in future because it enables the growth of conformal coatings for nanostructures and three-dimensionally structured surfaces at low temperatures (< 400 o C). The low temperature processing is needed as different materials are integrated with semiconductor crystals to produce hybrid materials and three-dimensionally stacked heterostructures.…”

Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 99%

“…[101][102][103][104][105][106][289][290][291][292] One potential way is a concomitant nitridation of III-V surfaces resulting a III-N nitride passivation together with hydrogen. 287 Benefits of the hydrogen passivation include simplicity This is the author's peer reviewed, accepted manuscript. However, the online version of record will be different from this version once it has been copyedited and typeset.…”

Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 99%

Passivation of III–V surfaces with crystalline oxidation

Laukkanen

Punkkinen

Kuzmin

et al. 2021

Applied Physics Reviews

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The control of interfacial physicochemical properties associated with device materials to minimize the impact of point defects on device performance has been a dominant theme in the semiconductor industry.The control of the density of such defects for silicon has been well established for metal oxidesemiconductor field-effect device applications through deliberate reactions with chemically congruent species, such as hydrogen. In contrast, the control of interfacial defects for technologically important III-V device materials is still an active area of research. Performance criteria for the III-V devices are demanding in terms of energy efficiency, material consumption, sensitivity, and speed. The surface reactions of III-V crystals, including the oxidation, are typically known to result in performance limitation for devices, causing significant degradation due to high defect-level densities at the surfaces/interfaces, in contrast to high quality bulk crystal regions. Here, we discuss the approach of utilizing atomically thin, ordered oxide interfacial layers of III-V compound semiconductors, since they provide a unique opportunity for metal-oxide semiconductor applications, compared to the more common approach to avoid the surface oxidation. The long-range ordered oxide interfaces have been obtained by

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“…Therefore, Kim et al tried to design an AlGaN/GaN HEMTs by combining the surface passivation effect and the free-standing GaN substrate. They suggest that the surface passivation effect with an AlN thin film deposited by atomic layer deposition can be applied to the etched GaN surface to improve the interfacial quality [151]. The thickness of AlN layer was estimated to be ∼2.0 nm, similar to the value from ellipsometer.…”

Section: Fabrication Of Iii-nitride Nanosheets-based Devices For Vari...mentioning

confidence: 65%

Recent progress in III-nitride nanosheets: properties, materials and applications

Huang

Wang

et al. 2021

Semicond. Sci. Technol.

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As compared with their bulk materials, III-nitride nanosheets, including gallium nitride, aluminium nitride, indium nitride, reveal wider bandgap, enhanced optical properties, anomalously temperature-dependent thermal conductivity, etc, which are more suitable for the fabrication of nano-photodetectors, nano-field electron transistors, etc, for the application in the fields of nano-optoelectronics and nano-electronics. Although the properties of III-nitrides have been predicted based on the first-principles calculation, the experimental realization of III-nitride nanosheets has been restricted primarily due to dangling bonds on the surface and strong built-in electrostatic field caused by wurtzite/zinc-blende structures. To tackle these issues, several effective approaches have been introduced, and the distinct progress has been achieved during the past decade. In this review, the simulation and prediction of properties of III-nitride nanosheets are outlined, and the corresponding solutions and novel developed techniques for realisation of III-nitride nanosheets and defect control are discussed in depth. Furthermore, the corresponding devices based on the as-grown III-nitride nanosheets are introduced accordingly. Moreover, perspectives toward the further development of III-nitrides nanosheets and devices are also discussed.

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AlN passivation effect on Au/GaN Schottky contacts

Cited by 11 publications

References 35 publications

Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes

Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes

Passivation of III–V surfaces with crystalline oxidation

Recent progress in III-nitride nanosheets: properties, materials and applications

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