AlN wideband energy harvesters with wafer-level vacuum packaging utilizing three-wafer bonding

Wang, Nan; Sun, Chengliang; Siow, Li Yan; Ji, Hongmiao; Chang, Peter Hyun Kee; Zhang, Qingxin; Gu, Yuandong

doi:10.1109/memsys.2017.7863539

Cited by 11 publications

(4 citation statements)

References 5 publications

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“…Aluminum nitride has emerged as an important material for micro-electromechanical (MEMS) based systems 1,2 such as surface and bulk acoustic resonators, 1,3 atomic force microscopy (AFM) cantilevers, 1 accelerometers, 4,5 oscillators, 6 resonators for energy harvesting, 7,8 and band-pass filters. 9 The advantages of using AlN in MEMS devices include metal−oxide−semiconductor (CMOS) compatibility, high thermal conductivity, and high temperature stability.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Piezoelectric Response of AlN via CrN Alloying

et al. 2018

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Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. Herein, we report density functional theory calculations of structure and properties of the Cr-AlN system for Cr concentrations ranging from zero to beyond the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in CrxAl1−xN alloys is the increase of the internal parameter u of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we have found that Cr-AlN has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that Cr-AlN is a viable piezoelectric material whose properties can be tuned via Cr composition. We support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus d33 is approximately four times larger than that of pure AlN. This finding, combined with the relative ease of synthesis under nonequilibrium conditions, may propel Cr-AlN as a prime piezoelectric material for applications such as resonators and acoustic wave generators.

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Section: Introductionmentioning

confidence: 99%

Enhanced Piezoelectric Response of AlN via CrN Alloying

et al. 2018

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“…As stated in the introduction, several other designs have been proposed to overcome the limitation in terms of the operational bandwidth of cantilevers [1,13,34,35,36]. The performance and main characteristics of these works are summarized in Table 4.…”

Section: Discussionmentioning

confidence: 99%

Design of the Squared Daisy: A Multi-Mode Energy Harvester, with Reduced Variability and a Non-Linear Frequency Response

Gratuze

Alameh

Nabki

2019

Sensors

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With the rise of the Internet of Things (IoT) and the ever-increasing number of integrated sensors, the question of powering these devices represents an additional challenge. The traditional approach is to use a battery; however, harvesting energy from the environment seems to be the most practical approach. To that end, the use of piezoelectric MEMS energy has been proven as a potential power source in a wide range of applications. In this work, a proof of concept for a new architecture for MEMS energy harvesters is presented. The influence of the dimensions and different characteristics of these designs is discussed. These designs have been proven to be resilient to process variation thanks to their unique architecture. This work presents the use of vibration enhancement petals in order to widen the bandwidth of the energy harvester and provide a non-linear frequency response. The use of these vibration enhancement petals has allowed the fabrication of three design variations, each using an area of 1700 µm by 1700 µm. These designs have an operating bandwidth between 3.9 kHz and 14.5 kHz and can be scaled to achieve other targeted resonant frequencies.

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“…[85] and [86] for ultrasound sensing, and in Ref. [87] for piezoelectric energy harvesting. Taking the latter process as a representative example, it is comprised of three bonded wafers with the middle one containing the mechanical element and the other two wafers constituting capping structures, bonded to the device wafer, with etched cavities to allow the mechanical element unconstrained movement.…”

Section: Mems Integrationmentioning

confidence: 99%

Large-Scale 3D Chips: Challenges and Solutions for Design Automation, Testing, and Trustworthy Integration

Knechtel

Sinanoglu

Elfadel

et al. 2017

IPSJ Transactions on System LSI Design Methodology

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Three-dimensional (3D) integration of electronic chips has been advocated by both industry and academia for many years. It is acknowledged as one of the most promising approaches to meet ever-increasing demands on performance, functionality, and power consumption. Furthermore, 3D integration has been shown to be most effective and efficient once large-scale integration is targeted for. However, a multitude of challenges has thus far obstructed the mainstream transition from "classical 2D chips" to such large-scale 3D chips. In this paper, we survey all popular 3D integration options available and advocate that using an interposer as system-level integration backbone would be the most practical for large-scale industrial applications and design reuse. We review major design (automation) challenges and related promising solutions for interposer-based 3D chips in particular, among the other 3D options. Thereby we outline (i) the need for a unified workflow, especially once full-custom design is considered, (ii) the current design-automation solutions and future prospects for both classical (digital) and advanced (heterogeneous) interposer stacks, (iii) the state-of-art and open challenges for testing of 3D chips, and (iv) the challenges of securing hardware in general and the prospects for large-scale and trustworthy 3D chips in particular.

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AlN wideband energy harvesters with wafer-level vacuum packaging utilizing three-wafer bonding

Cited by 11 publications

References 5 publications

Enhanced Piezoelectric Response of AlN via CrN Alloying

Enhanced Piezoelectric Response of AlN via CrN Alloying

Design of the Squared Daisy: A Multi-Mode Energy Harvester, with Reduced Variability and a Non-Linear Frequency Response

Large-Scale 3D Chips: Challenges and Solutions for Design Automation, Testing, and Trustworthy Integration

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