Alpha Particle Detection Using Highly Rectifying Ni/Ga<sub>2</sub>O<sub>3</sub>/4H-SiC Heteroepitaxial MOS Junction

Chaudhuri, Sandeep K.; Nag, Ritwik; Ahmad, Iftikhar; Mandal, Krishna C.

doi:10.1109/ted.2023.3328329

Cited by 3 publications

(1 citation statement)

References 37 publications

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“…Silicon carbide (SiC) materials have higher bandwidth, critical breakdown field strength, electron saturation drift rate, and higher thermal conductivity than traditional Si materials. In turn, the corresponding SiC devices have higher voltage resistance, high temperature resistance, and higher frequency, with high efficiency and energy-saving advantages, which have great potential for future applications and are highly expected in the green energy revolution [ 1 , 2 , 3 , 4 , 5 , 6 ]. The horizontal hot wall design of the susceptor is now the dominant design in CVD applications for SiC growth, as it provides more uniform heat distribution and better precursor cracking efficiency.…”

Section: Introductionmentioning

confidence: 99%

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth

Yang,

Guo,

Zhao

et al. 2024

Materials

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In this study, we systematically explore the impact of C/Si ratio, pre-carbonization time, H2 etching time, and growth pressure on the buffer layer and subsequent epitaxial layer of 6-inch 4H-SiC wafers. Our findings indicate that the buffer layer’s C/Si ratio and growth pressure significantly influence the overall quality of the epitaxial wafer. Specifically, an optimal C/Si ratio of 0.5 and a growth pressure of 70 Torr yield higher-quality epitaxial layers. Additionally, the pre-carbonization time and H2 etching time primarily affect the uniformity and surface quality of the epitaxial wafer, with a pre-carbonization time of 3 s and an H2 etching time of 3 min found to enhance the surface quality of the epitaxial layer.

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