C1?¢stal chemistry of alpha-quartz is discussed in relation to the nature, concentration and distribution of the common impurities. Two schemes for incorporation of impurities in the host structure, viz., the charge compensation model for untwinned natural quartz, and the broken-bond model for synthetic quartz to accomodate excess impurity residue after charge compensation, are critically reviewed. Another model for the presence of AI-H defects independent of alkali association in natural quartz is suggested. It is pointed out that the growth pressure influences the nature and distribution of impurities as well as generation of planar and line defects in synthetic quartz. It is also established that mechanical Q (which is a measure of the acoustic loss) of synthetic crystals grown at low pressure deteriorates with increase in impurity content in excess of what is required for satisfying the charge compensation rule.