AlSb single-crystal grown by HPBM

Kutny, V.; Rybka, A.; Abyzov, Alexander S.; Давыдов, Л. Н.; Komar, V. K.; Rowland, Mark; Smith, C.F.

doi:10.1016/s0168-9002(00)01039-1

Cited by 24 publications

(6 citation statements)

References 11 publications

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“…The Hall data revealed p-type conductivity with carrier concentration, mobility and resistivity of 2.0 Â 10 18 cm À3 , 70.28 cm 2 /V s and 4.58 Â 10 À2 O cm, respectively at 300 K and 1.2 Â 10 17 cm À3 , 23.87 cm 2 /V s and 2.50 O cm, respectively at 77 K. In the published literature, the reported electrical properties for bulk grown AlSb substrates varies considerably. For example, room temperature resistivities of 0.1 [9], 1.27 [19] and 410 5 O cm [16] have been reported for unintentionally doped material. According to the Al and Sb vacancy concentration versus growth temperature diagram of AlSb solid solution from Ref.…”

Section: Article In Pressmentioning

confidence: 99%

“…Moreover, the oxides may act as nucleation centers preventing the growth of a single crystal. For these reasons, the research efforts to date on the growth of AlSb crystals by different growth techniques (Bridgman [9,11,[13][14][15][16], Traveling Heater Method (THM) [9], Czochralski [9,[17][18][19][20], LPE [21] and MOCVD [22][23][24] in the characterization of suitable crucible materials. This paper presents a unique way of solving the sticking problem of AlSb to crucible materials.…”

Section: Introductionmentioning

confidence: 99%

“…A wide range of crucible materials have been tried to reduce or eliminate the adhesion between the AlSb melt and the crucible walls (see Table 1). Recently, Kutny et al [16] using HPBM (highpressure Bridgman method) characterized up to six different crucible materials, namely vitrified carbon, aluminum oxide, GSP graphite, beryllium oxide, MPG graphite coated with aluminum oxide, and zirconium oxide crucibles. The zirconium oxide crucibles provided the best results where no traces of crucible wall interaction with the AlSb melt was observed [16].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, Kutny et al [16] using HPBM (highpressure Bridgman method) characterized up to six different crucible materials, namely vitrified carbon, aluminum oxide, GSP graphite, beryllium oxide, MPG graphite coated with aluminum oxide, and zirconium oxide crucibles. The zirconium oxide crucibles provided the best results where no traces of crucible wall interaction with the AlSb melt was observed [16]. However, impurity incorporation from the zirconium oxide crucible into the solidifying crystal has not been studied (which is crucial to know for any semiconducting material).…”

Section: Introductionmentioning

confidence: 99%

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Adhesion-free growth of AlSb bulk crystals in silica crucibles

Pino

Dutta

2006

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Adhesion-free growth of AlSb bulk crystals in silica crucibles

Pino

Dutta

2006

Journal of Crystal Growth

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“…[1][2][3] Aluminum antimonide, which is a III-V semiconductor with an indirect band gap of 1.69 eV, is a promising candidates but its potential for radiation detection has not been conclusively established yet. 4,5 The basic mechanism underlying radiation detection in a semiconductor can be summarized as follows: (1) an incoming quantum of radiation transfers energy to the electrons in the material creating electron-hole pairs, (2) the charge carriers are separated in an externally applied electric field, (3) the magnitude of the resulting electric current is measured. To achieve maximum energy resolution, the "loss" of charge carriers due to scattering and recombination events must be minimized.…”

Section: Introductionmentioning

confidence: 99%

Extrinsic point defects in aluminum antimonide

2010

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We investigate thermodynamic and electronic properties of group IV (C, Si, Ge, Sn) and group VI (O, S, Se, Te) impurities as well as P and H in aluminum antimonide (AlSb) using first-principles calculations. To this end, we compute the formation energies of a broad range of possible defect configurations including defect complexes with the most important intrinsic defects. We also obtain relative scattering cross strengths for these defects to determine their impact on charge carrier mobility. Furthermore, we employ a self-consistent charge equilibration scheme to determine the net charge carrier concentrations for different temperatures and impurity concentrations. Thereby, we are able to study the effect of impurities incorporated during growth and identify optimal processing conditions for achieving compensated material. The key findings are summarized as follows. Among the group IV elements, C, Si, and Ge substitute for Sb and act as shallow acceptors, while Sn can substitute for either Sb or Al and displays amphoteric character. Among the group VI elements, S, Se, and Te substitute for Sb and act as deep donors. In contrast, O is most likely to be incorporated as an interstitial and predominantly acts as an acceptor. As a group V element, P substitutes for Sb and is electrically inactive. C and O are the most detrimental impurities to carrier transport, while Sn, Se, and Te have a modest to low impact. Therefore, Te can be used to compensate C and O impurities, which are unintentionally incorporated during the growth process, with minimal effect on the carrier mobilities.Comment: 12 pages, 12 figure

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Thin-Film Gallium Antimonide for Room-Temperature Radiation Detection

Vaughan

Rahimi

Balakrishnan

et al. 2015

Journal of Elec Materi

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Thin-film GaSb diodes were fabricated and investigated for room-temperature radiation detection. GaSb PN junction-based detectors were fabricated by use of both ion-implantation and epitaxial methods, and were compared for crystal quality and detector performance. The implanted junctions were obtained by p-type Be ion-implantation in n-type GaSb substrates whereas the epitaxial junctions were grown by solid-source molecular beam epitaxy. Alpha-particle and fission-fragment peaks were observed in spectra from 241 Am and 252 Cf. A highly uniform response was obtained from epitaxially grown GaSb junctions whereas large pulse-height response variation was observed for the implanted diodes. The devices were fabricated in the form of metalized squares with dimensions varying from 2 9 2 mm 2 to 500 9 500 lm 2 . Reducing the size reduced detection efficiency but also increased the pulse height response and thus the signal-to-noise ratio, consistent with diode capacitance and output voltage pulse relationships. Cross-sectional transmission electron microscope imaging revealed very high-quality material for the epitaxial structure and implantation-induced damage for the implanted material.

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AlSb single-crystal grown by HPBM

Cited by 24 publications

References 11 publications

Adhesion-free growth of AlSb bulk crystals in silica crucibles

Adhesion-free growth of AlSb bulk crystals in silica crucibles

Extrinsic point defects in aluminum antimonide

Thin-Film Gallium Antimonide for Room-Temperature Radiation Detection

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