This induced internal polarization field, in response, could redistribute the concentration of free carriers within semiconductors and at its contact interface, thereby changes the overall charge transport behavior, indeed analogous to the piezoelectric effect. [1,5] Importantly, strain gradient is the key to the flexoelectric effect; however, applied strain, in principle, will also modulate the electronic structure, which in turn could introduce conceptually innovative and till "forbidden" functionalities. [1,4,6] For instance, applied strain-induced broken crystal symmetry modify the effective masses of charge carriers, which leads to generating a pronounced shift in the effective bandgap of semiconductors, like silicon, TiO 2 , and others. [7][8][9] In fact, theoretically, it has been predicted that the fundamental bandgap of the silicon could be shrunk considerably (up to 1800 nm, e.g., short-wavelength infrared) with strain engineering. [9] As a basic building block, silicon is widely used in the microelectronics industry; however, owing to its fundamental optical bandgap (1.12 eV), the use of silicon for optoelectronics (including photovoltaics) is still limited to visible and near-infrared spectral range (λ ≤ 1100 nm). Indeed, the key challenge is to enlarge the broadband photoabsorption (up to short-wavelength infrared) of silicon, such that it can be applied for commercial application: however, this yet remained a critical challenge.Recently, distinct from the p-n junction-based photovoltaic effect (PV), the flexoelectric effect driven zero-bias photocurrent under light illumination has been demonstrated, known as the flexo-photovoltaic (FPV) effect. [6] Therefore, being universal property, strain gradient induced FPV effect and simultaneously modification of the effective bandgap exceeds the fundamental bandgap absorption limit not only for silicon but other class of semiconductors as well. However, the flexoelectric-driven photo response is still reported to the fundamental bandgap modification. Herein, we demonstrate that a photon sensing of the single crystal silicon is extended far beyond the fundamental bandgap by utilizing the flexoelectric effect. Particularly, the localized force applied by a pointed tip induces long-range distributed inhomogeneous strain, which not only breaks the centrosymmetry but also extend the fundamental Mechanical deformation-induced strain gradients and coupled spontaneous electric polarization field in centrosymmetric materials, known as the flexoelectric effect, can generate ubiquitous mechanoelectrical functionalities, like the flexo-photovoltaic effect. Concurrently, nano/micrometer-scale inhomogeneous strain reengineers the electronic arrangements and in turn, could alter the fundamental limits of optoelectronic performance. Here, the flexoelectric effect-driven self-powered giant shortwavelength infrared (λ ≤ 1800 nm) photoresponse from centrosymmetric bulk silicon, indeed far beyond the fundamental bandgap (λ = 1100 nm) is demonstrated. Particularly, large on/off...