Alternative buffer layers in Sb2Se3 thin‐film solar cells to reduce open‐circuit voltage offset

Gharibshahian, Iman; Orouji, Ali A.

doi:10.1016/j.solener.2020.03.115

Cited by 45 publications

(24 citation statements)

References 44 publications

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“…Therefore, a thin buffer layer is anticipated to achieve outstanding solar cell performances. The optimum thickness of the buffer layer is selected to be 60 nm for the following calculations in this simulation work, which is consistent with the buffer thickness employed in the previous works [37,39,40]. In this simulation, the effect of the CdS donor density ranging from 1 × 10 12 to 5 × 10 18 cm −3 with 2000-nm-thick absorber (acceptor density of 3.7 × 10 18 cm −3 ), 60-nm-CdS, and 50-nm-FTO (donor density of 1 × 10 18 cm −3 ) is analyzed.…”

Section: Effects Of Thickness and Donor Density Of Buffer Layer On Cell Performancesmentioning

confidence: 77%

“…The work function values of 4.28 eV [38] and 5.15 eV [38] are employed for the aluminum (Al) as front contact and nickel (Ni) as back contact, respectively. The thermal velocity of 1 × 10 7 cm/s for electrons and holes in each layer has been put during the simulation work [37,39]. The surface recombination velocities for both electrons and holes are set to 10 7 and 10 5 cm/s at front contact 10 5 and 10 7 cm/s at back contact, respectively [36,39].…”

Section: Device and Simulationmentioning

confidence: 99%

“…The thermal velocity of 1 × 10 7 cm/s for electrons and holes in each layer has been put during the simulation work [37,39]. The surface recombination velocities for both electrons and holes are set to 10 7 and 10 5 cm/s at front contact 10 5 and 10 7 cm/s at back contact, respectively [36,39]. The parameters utilized at the CdS/ CuBi 2 O 4 interface for the simulation study are illustrated in Table 2.…”

Section: Device and Simulationmentioning

confidence: 99%

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Simulating the performance of a highly efficient CuBi2O4-based thin-film solar cell

2021

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In this study, copper bismuth oxide (CuBi2O4) absorber-based thin film heterojunction solar cell structure consisting of Al/FTO/CdS/CuBi2O4/Ni has been proposed. The proposed solar cell device structure has been modeled and analyzed by using the solar cell capacitance simulator in one dimension (SCAPS-1D) software program. The performance of the proposed photovoltaic device is evaluated numerically by varying thickness, doping concentrations, defect density, operating temperature, back metal contact work function, series and shunt resistances. The current density–voltage behaviors at dark and under illumination are investigated. To realize the high efficiency CuBi2O4-based solar cell, the thickness, acceptor and donor densities, defect densities of different layers have been optimized. The present work reveals that the power conversion efficiency can be enhanced by increasing the absorber layer thickness. The efficiency of 26.0% with open-circuit voltage of 0.97 V, short-circuit current density of 31.61 mA/cm2, and fill-factor of 84.58% is achieved for the proposed solar cell at the optimum 2.0-μm-thick CuBi2O4 absorber layer. It is suggested that the p-type CuBi2O4 material proposed in the present study can be employed as a promising absorber layer for applications in the low cost and high efficiency thin-film solar cells.

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Section: Effects Of Thickness and Donor Density Of Buffer Layer On Cell Performancesmentioning

confidence: 77%

Section: Device and Simulationmentioning

confidence: 99%

Section: Device and Simulationmentioning

confidence: 99%

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Simulating the performance of a highly efficient CuBi2O4-based thin-film solar cell

2021

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“…However, using the SCAPS-1D simulator, multiple Sb 2 Se [ [59] , [60] , [61] ] and Sb 2 Se 3 [ 62 ] based solar cell architectures with varying electron transport layers (ETLs) [ 63 , 64 ] and hole transport layers (HTLs) [ 65 , 66 ] have recently been explored, with reasonably good photovoltaic (PV) performance. Basak et al.…”

Section: Introductionmentioning

confidence: 99%

Concurrent investigation of antimony chalcogenide (Sb2Se3 and Sb2S3)-based solar cells with a potential WS2 electron transport layer

Rahman

Moon

Hossain

et al. 2022

Heliyon

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“…Nevertheless, the interface properties of the Sb 2 Se 3 heterojunction, such as the photoincuded carrier dynamics at the interface, have not been insightfully investigated yet. Why the CdS buffer layer always produces better device performance than others (e.g., TiO 2 , ZnO, and SnO 2 buffer layers) and whether CdS is the best one are two urgent questions to be answered. , Therefore, further research is essential for a more systematic understanding of the carrier dynamics in the heterojunction, especially at the interface, which could lay a solid foundation for developing high-efficiency solar cells.…”

mentioning

confidence: 99%

Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions

Zhang

Jia

et al. 2021

ACS Energy Lett.

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The efficiency of antimony selenide (Sb2Se3) solar cells has been improved from <2% to >10% within only 7 years, but fundamental properties at the heterojunction interface such as the charge carrier transfer and the trap state localizing process has not been studied yet. Here, the carrier competing dynamics in Sb2Se3-based heterojunction has been systematically investigated. We find the competition between the band-edge electron transfer and the trapping process in CdS/Sb2Se3 will result in less-efficient charge separation and hence low open circuit voltage in photovoltaic devices. In contrast, the hot electron extraction at the SnO2/Sb2Se3 interface is nearly an order of magnitude faster than the trapping process, which can effectively escape the trapping carrier loss and potentially lead to higher open-circuit voltages. Our results reveal the hidden role of the buffer interface in the ultrafast charge extraction and provide a potential strategy to improve the performance of Sb2Se3-based solar cells.

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Alternative buffer layers in Sb2Se3 thin‐film solar cells to reduce open‐circuit voltage offset

Cited by 45 publications

References 44 publications

Simulating the performance of a highly efficient CuBi2O4-based thin-film solar cell

Simulating the performance of a highly efficient CuBi2O4-based thin-film solar cell

Concurrent investigation of antimony chalcogenide (Sb2Se3 and Sb2S3)-based solar cells with a potential WS2 electron transport layer

Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions

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