Alternative material titanium nitride based refractive index sensor embedded with defects: An emerging solution in sensing arena

Tathfif, Infiter; Rashid, Kazi Sharmeen; Yaseer, Ahmad Azuad; Sagor, Rakibul Hasan

doi:10.1016/j.rinp.2021.104795

Cited by 36 publications

(4 citation statements)

References 35 publications

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“…The PSHE-TD interrogation method exhibits a 43,789 m/RIU sensitivity, which shows a 224% improvement than the corresponding Lossy mode resonance structure 18 . Moreover, the structural sensitivity performance is much better than the recent reported sensors 30 – 34 . Finally, a comparative performance matrix is provided with the similar reported works.…”

Section: Introductionmentioning

confidence: 73%

Excitation of optical tamm state for photonic spin hall enhancement

Goyal,

Divyanshu,

Massoud

2024

Sci Rep

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This work presents a dielectric material-based optical Tamm state (OTS) excitation technique with modified dispersion characteristics for photonic spin hall effect (PSHE) enhancement. The dispersion analysis of the structure is carried out to validate OTS’s localization and corresponding PSHE generation for a given polarization at 632.8 nm incident wavelength. The exceptional points are optimized by considering thickness-dependent angular dispersion analysis. PSHE-based transverse displacement (PSHE-TD) is dependent on the defect layer thickness. The optimized structure provides 10.73 $$\times \lambda$$ × λ (or 6.78 $$\upmu$$ μ m) PSHE-TD at an incidence angle of 41.86$${}^{\circ }$$ ∘ . The PSHE-TD of the optimized structure is sufficiently high due to the much narrower resonance than the plasmonic-based structures. Further, the structure’s potential to function as a PSHE-TD-based optical sensor is assessed. The optimized structure shows an analytical average sensitivity of about 43,789 $$\upmu$$ μ m/RIU showing its capability to detect the analytes with refractive index variations in the $$10^{-4}$$ 10 - 4 range. The structure demonstrates a three-time sensitivity improvement compared to similar resonance designs. Considering only dielectric materials in the proposed structure and considerably enhanced PSHE-TD, the development of highly efficient PSHE-TD-assisted commercial structures is anticipated.

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Section: Introductionmentioning

confidence: 73%

Excitation of optical tamm state for photonic spin hall enhancement

Goyal,

Divyanshu,

Massoud

2024

Sci Rep

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“…A sharper resonance means that the differentiating capability between two resonant modes is increased. The reflectance is given by the following equation [40]: and the rest of the parameters same as those in Table 1. Fig.…”

Section: Optimization and Results Analysismentioning

confidence: 99%

ZrN-based Plasmonic Sensor: A Promising Alternative to Traditional Noble Metal-based Sensors for CMOS-Compatible and Tunable Optical Properties

Rakib¹,

Rahad²,

Faruque³

et al. 2023

Preprint

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In this article, we introduce a novel comb shaped plasmonic refractive index sensor that employs a ZrN-Insulator-ZrN configuration. The sensor is constructed using Zirconium Nitride (ZrN), an alternative refractory material that offers advantages over traditional metals such as silver and gold, as ZrN is Standard Complementary Metal Oxide Semiconductor (CMOS)-compatible and has tunable optical properties. The sensor has recorded a maximum sensitivity, figure of merit (FOM), and sensing resolution of 1445.46 nm/RIU, 140.96, and 6.91 × 10^−7 𝑅𝐼𝑈^-1, respectively. Beyond that, the integration of ZrN offers the sensor with various advantages, including higher hardness, thermal stability at high temperatures, better corrosion and abrasion resistance, and lower electrical resistivity, whereas traditional plasmonic metals lack these properties, curtailing the real-world use of plasmonic devices. As a result, our suggested model surpasses the typical noble material based (Metal-Insulator-Metal) MIM arrangement and offers potential for the development of highly efficient, robust, and durable nanometric sensing devices which will create a bridge between nanoelectronics and plasmonics.

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“…This structure provides the fundamental idea for selecting the layer for the borophene based sensor design structure and its feasibilities with other materials. The sensitivity of the proposed structure is calculated using the equation of ΔS = Δƒ/Δn, which is measured in terms of THz (Terahertz)/RIU (Refractive index Unit) [45]. In this formula, Δƒ is the difference between two consecutive frequency peaks, and Δn is the difference between respective refractive index points.…”

Section: Resultsmentioning

confidence: 99%

A Multi-Layered Borophene-Silica-Silver Based Refractive Index Sensor for Biosensing Applications Operated at the Infrared Frequency Spectrum

2022

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We have presented the borophene based refractive index sensor for the infrared frequency spectrum of 188 to 250 THz (1.2–1.6 µm) range. The proposed structure was formed by using the Silver-borophene-silica-Ag layered structure. The behaviour of the different analyte (with a different refractive index) material is numerically calculated by placing it on the top of the structure. The behaviour of the structure is identified in terms of absorption, reflectance, physical parameter variation, and oblique angle incident conditions. The presented results provide the basic idea of selecting optimized structure dimensions to get the specific resonating response. This sensor offers the Figure of Merit (FOM) of 444 RIU−1 with high sensitivity of 660 THz/RIU (4471 nm/RIU). The refractive index sensor also provides wide-angle stability for (0° to 80°) for the wide frequency range (239 to 245 THz and 207 to 209 THz). This sensor is developed on the silver metal layer (not required to separate borophene from its origin metal deposition process) and easily fabricated using standard boron fabrication and layered deposition techniques. The results of the proposed structure make it possible to design a basic biosensor structure. This device is also applicable for various THz and biomedical applications.

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Alternative material titanium nitride based refractive index sensor embedded with defects: An emerging solution in sensing arena

Cited by 36 publications

References 35 publications

Excitation of optical tamm state for photonic spin hall enhancement

Excitation of optical tamm state for photonic spin hall enhancement

ZrN-based Plasmonic Sensor: A Promising Alternative to Traditional Noble Metal-based Sensors for CMOS-Compatible and Tunable Optical Properties

A Multi-Layered Borophene-Silica-Silver Based Refractive Index Sensor for Biosensing Applications Operated at the Infrared Frequency Spectrum

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