Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

Abstract

In this study, the Al2O3 nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm2/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

Low-temperature solution-processed alumina dielectric films for low-voltage organic thin film transistors

“…Among them, Al 2 O 3 dielectrics have attracted intense interest due to its high k value (7.0-9.0) and big band-gap (8.45-9.9 eV) [15][16][17][18][19]. Moreover, Al 2 O 3 based dielectrics, such as sodium beta-alumina [20], Al 2 O 3 /polymer nanocomposite [21], aluminum titanate [22] have also widely employed for TFTs. Recently, Al 2 O 3 have also been employed as high-performance dielectrics for transparent oxide TFTs, indicating the universal functionality [23][24][25].…”

Research Progress on Flexible Oxide-Based Thin Film Transistors

“…Recently, the oxide-based TFTs driving OLED have become the most promising technology to realize really flexible displays [34][35][36][37][38][39][40][41]. The technological advance in TFTs is a significant factor for promoting the development of such displays [42][43][44][45][46][47][48][49][50]. Researchers around Nomura et al [42], the earliest engaged in this field, have successfully fabricated the first transparent and flexible oxide-based TFTs, which have rapidly attracted the interest of numerous researchers all over the world [51][52][53][54][55][56][57][58][59][60][61].…”

High-Performance Top-Gate and Self-Aligned In–Ga–Zn-O Thin-Film Transistor Using Coatable Organic Insulators Fabricated at 150 °C

“…Coatable organic insulator is a candidate of a GI for flexible TFTs, because it can be formed by a low-temperature (below 200 °C), simple, and vacuum-free process [2][3][4][5][6][7][8][9][10][11]. In addition, organic materials have a higher flexibility compare to inorganic materials [10].…”

“…In addition, organic materials have a higher flexibility compare to inorganic materials [10]. This is also an important feature for flexible device applications.…”

“…There are several studies about hybrid IGZO TFTs with organic GIs (OGIs) [2][3][4][6][7][8][9][10][11], and it has been reported that bottom gate IGZO TFTs with OGIs showed poor performances than top-gate TFTs, since an OGI was damaged during the deposition of an IGZO channel by sputtering [4,6,11]. Therefore, it can be said that a top-gate structure is appropriate Manuscript received January 09, 2016.…”