Aluminium corrosion in power semiconductor devices

Ingman, Jonny; Peters, J.; Hanf, Michael; Ross, R.; Koopmans, G.; Jormanainen, Joni; Forsström, A.; Ross, G.; Kaminski, Nando; Vuorinen, Vesa

doi:10.1016/j.microrel.2022.114766

Cited by 5 publications

(3 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…No significant degradation was expected for these values as well as for the threshold voltage (VGE, th). From testing under high humidity, the reduction of blocking capability is well known and reported [3,6], therefore, an increase of ICES at 1200 V could be a sign of decreasing insulation capability or corrosion at the chip interface. But, none of these can be stated at dry conditions by the data in fig.…”

Section: Static Resultsmentioning

confidence: 98%

“…Furthermore, a high voltage bias close to the nominal voltage (Vnom) increases the stress [6] and leads to a more application relevant testing scenario. While testing under high humidity, the chip interface is attacked and aluminium corrosion at the edge termination causes a reduction of the blocking capability [3,6]. Beside the aluminium corrosion, electro-chemical migration (ECM) can be observed [6] due to contamination in the manufacturing process, where metals form a conductive path at areas of high electrical field.…”

Section: Climate Related Degradation Of Igbtsmentioning

confidence: 99%

“…Many reliability investigations on power electronics are focused on silicone gel (Si-gel) potted power semiconductor modules and their degradation behaviour under harsh climates. Moisture induced aging of these devices is well studied and the failure mechanism as well as the influence on the electrical performance are documented [3]. For corrosion products related to ionic contamination, the situation is different and rather complex.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Sulphur related Corrosion in Power Modules and its Impact on the Switching Performance

Hanf,

Schnell,

Matthias

et al. 2023

ISPS'23 Proceedings

View full text Add to dashboard Cite

High power semiconductor modules, exposed to polluted (i.e. H2S) and moist climates can experience corrosion at the packaging materials. Sulphur and copper will form Cu2S-dendrites in the insulation trenches of the substrates, which are able to short the insulation distance. But, previous experiments pointed out, that modules with excessive dendrite growth are able to withstand high blocking voltages under DC-bias. While most IGBTs will operate under switching operation with fast transients, ohmic connections at insulation distances will change the situation tremendously. For this study, 1200 V silicon-IGBT-modules in a standard package were preconditioned in an accelerated corrosive gas test and will be operated in a switching test bench to verify corrosion related performance issues in active operation.

show abstract

Section: Static Resultsmentioning

confidence: 98%