Aluminium-induced crystallisation of silicon on glass for thin-film solar cells

Nast, Oliver; Brehme, S.; Pritchard, Stephen C.; Aberle, Armin G.; Wenham, Stuart

doi:10.1016/s0927-0248(00)00117-3

Cited by 101 publications

(62 citation statements)

References 8 publications

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“…In Figure 3c, the most intense peak is shown about 507cm -1 , and although it may be related to alumina, most probably it can be associated to crystalline silicon 27,28 . In this case, the Si would be originated from the substrate 24,25 , diffusing to the interface substrate/Al, as discussed before, in good agreement with some peaks found out the XRD diffractograms. Figure 3d shows X-ray diffractograms for Al 2 O 3 films deposited on Sb-doped SnO 2 layers.…”

Section: Resultssupporting

confidence: 86%

“…This Si layer comes from the soda-lime glass substrate, where Si diffuses to the interface with the Al film 16 . It is similar to what happens in the AIC (aluminuminduced crystallization) technique, for Si deposition 24,25 , where the silicon nucleates on the Al surface. Figure 3c shows Raman data for thermally oxidized Al layers and show characteristic Al-O vibrations of γ-alumina 26 .…”

Section: Resultssupporting

confidence: 54%

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Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

et al. 2014

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Alternative materials for use in electronic devices have grown interest in the past recent years. In this paper, the heterojunction SnO 2 /Al 2 O 3 is tested concerning its use as a transparent insulating layer for use in FETs. The alumina layer is obtained by thermal annealing of metallic Al layer, deposited by resistive evaporation technique. Combination of undoped SnO 2 , deposited by sol-gel-dip-coating technique, and Al thermally annealed in O 2 -rich atmosphere, leads to fair insulation when the number of aluminum oxide layers is 4, with 0.3% of the current lost through the gate terminal as leakage current. This insulation is not obtained for devices with alumina layer treated for long time, under room atmosphere, due to degradation of the insulating film and interfusion with the conduction channel even using Sb-doped SnO 2 . The annealing of Al deposited on soda-lime glass substrate leads also to the formation of a Si layer, crystallized at Substrate/Al 2 O 3 interface. The conclusion is that for an efficient insulation the thermal annealing must be short and then, O 2 -rich atmospheres are preferred.

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Section: Resultssupporting

confidence: 86%

Section: Resultssupporting

confidence: 54%

Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

et al. 2014

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“…The resulting poly-Si films feature large grains (much larger than the film thickness) and a high preferential (100) orientation of the surface of the grains [9]. Due to the fact that Al is incorporated into the poly-Si film during the ALILE process (Al is an acceptor in Si) the resulting poly-Si film is heavily doped (p + -type) [10]. The hole concentration is in the order of 10 18 cm -3 .…”

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confidence: 99%

Large-grained polycrystalline silicon on glass for thin-film solar cells

et al. 2006

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“…1,2 One such technique is aluminum induced crystallization (AIC), which utilizes a sacrificial aluminum layer that enables crystallization of a-Si at low temperatures (as low as 150 o C has been reported 3 ). AIC is realized by annealing an a-Si/Al film stack at temperatures below the Al-Si eutectic temperature, 577 o C. 4 The crystallization takes place by the consecutive dissolution and re-precipitation of Si in Al at the a-Si/Al interface, where the driving force is the difference in the respective solubilities of a-Si and crystalline Si in Al. 5 From this point of view, it is clear that the a-Si film properties, in particular its bonding, would have a significant influence on the dissolution/re-precipitation behavior of Si in Al, thus affect the AIC process.…”

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confidence: 99%

Structural properties of a-Si films and their effect on aluminum induced crystallization

et al. 2015

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In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size.

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Aluminium-induced crystallisation of silicon on glass for thin-film solar cells

Cited by 101 publications

References 8 publications

Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

Large-grained polycrystalline silicon on glass for thin-film solar cells

Structural properties of a-Si films and their effect on aluminum induced crystallization

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