Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

Kezzoula, F.; Hammouda, A.; Kechouane, M.; Simon, Patrick; Abaidia, S.E.H.; Keffous, A.; Cherfi, Rabah; Menari, H.; Manseri, A.

doi:10.1016/j.apsusc.2011.03.135

Cited by 18 publications

(17 citation statements)

References 14 publications

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“…The as-deposited a-Si layer presents a broad band that can be deconvoluted into two peaks (Figure 5b). The broad peak centered at about 476 cm −1 corresponds to the amorphous silicon [7,8], and the narrowest one located at 511 cm −1 is generally ascribed to transverse optic mode of the phonon in nc-Si [8-12]. This result suggests that the a-Si layer contains a crystalline phase with crystallites in the nanometer scale.…”

Section: Resultsmentioning

confidence: 99%

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

2012

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Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

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Section: Resultsmentioning

confidence: 99%

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

2012

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“…This is because the short annealing time can not give the chance to aluminum to segregates into the polysilicon rather than the higher annealing times during which the diffusion of aluminum saturates and the transparency of the longer annealed films increases than the shorter annealing time samples or the as-deposited samples as seen in the photographs of the films in Figure 1 . 41 …”

Section: Resultsmentioning

confidence: 99%

“…So the optical transition of the polysilicon induced by layer exchange with aluminum in Al/Si annealed films undergoes indirectly. 41 , 46 Figure 10 shows Tauc’s plot of Al/Si films. The following Table 3 shows the values of optical energy gap of the prepared samples.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation

et al. 2020

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Metal-induced crystallization of amorphous silicon is a promising technique for developing high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal growth of polycrystalline silicon via aluminum-induced crystallization at different annealing times and temperatures. In this research, thin films of aluminum/silicon (Al/Si) and aluminum/silicon/tin (Al/Si/Sn) layers were fabricated using the thermal evaporation technique with a designed wire tungsten boat. MIC of a:Si was detected at annealing temperature of 500 °C using X-ray diffraction, Raman spectroscopy, and field emission scanning electron microscopy. The crystallinity of the films is enhanced by increasing the annealing time. In the three-layer thin films, MIC occurs because of the existence of both Al and Sn metals forming highly oriented (111) silicon. Nanocrystalline silicon with dimensions ranged from 5 to 300 nm is produced depending on the structure and time duration. Low surface reflection and the variation of the optical energy gap were detected using UV–vis spectroscopy. Higher conductivities of Al/Si/Sn films than Al/Si films were observed because of the presence of both metals. Highly rectifying ideal diode manufactured from Al/Si/Sn on the FTO layer annealed for 24 h indicates that this device has a great opportunity for the optoelectronic device applications.

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“…Various crystallization techniques of hydrogenated amorphous silicon (a-Si:H) films can be performed to prepare poly-Si films, such as laser induced crystallization (LIC) [2] , metal induced crystallization (MIC) [3] , solid phase crystallization (SPC) [4] . Due to the minimum thermal damage to the underlying substrates and rapid processing, laser induced crystallization has been used to produce good quality poly-Si films [5] .…”

Section: Introductionmentioning

confidence: 99%

Effect of surface morphology on laser-induced crystallization of amorphous silicon thin films

et al. 2013

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The effect of surface morphology on laser-induced crystallization of hydrogenated intrinsic amorphous silicon (a-Si:H) thin films deposited by PECVD is studied in this paper. The thin films are irritated by a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser. An effective melting model is built to identify the variation of melting regime influenced by laser crystallization. Based on the experimental results, the established correlation between the grain growth characterized by AFM and the crystalline fraction (Xc) obtained from Raman spectroscopy suggests that the crystallized process form amorphous phase to polycrystalline phase. Therefore, the highest crystalline fraction (Xc) is obtained by a optimized laser energy density.

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Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

Cited by 18 publications

References 14 publications

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation

Effect of surface morphology on laser-induced crystallization of amorphous silicon thin films

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