Aluminium nitride films made by low pressure chemical vapour deposition: Preparation and properties

Roman, Yurii; Adriaansen, A.P.M.

doi:10.1016/0040-6090(89)90707-4

Cited by 40 publications

(8 citation statements)

References 11 publications

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“…18͒, and most of the studies related to polycrystalline AlN grown by CVD in the Al-N-Cl-H system were achieved at deposition temperature between 600 and 1400°C. [19][20][21][22][23][24][25][26][27][28][29] They showed a decrease of AlN deposition rate at high temperature. This decrease seems to be related to homogeneous nucleation in the gas phase.…”

mentioning

confidence: 99%

Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD

Claudel¹,

Blanquet²,

Chaussende³

et al. 2011

J. Electrochem. Soc.

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International audienceThick polycrystalline AlN layers were grown at low pressure using high temperature chemical vapor deposition (HTCVD). The experimental setup consists of a graphite susceptor heated by an induction coil surrounding a vertical cold wall reactor. The reactants used were ammonia (NH(3)) and aluminum chloride (AlCl(x)) species formed in situ via chlorine (Cl(2)) reaction with high purity aluminum wire. AlN films were deposited on a 55 mm diameter graphite susceptor between 1200 and 1600 degrees C. AlN layers have been characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and electron backscattered diffraction. The influence of temperature on growth rate, surface morphology, grain size, and crystalline structure is presented. Growth rates of up to 230 mu m/h have been reached. A nonpolar preferred orientation of AlN films is stabilized at a higher temperature. The potential of investigation in this new range of experimental conditions, i.e., high temperature and high growth rate, as well as deposition of nonpolar AlN crystals, is very promising for epitaxial growth and extends the field of applications. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3536477] All rights reserve

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mentioning

confidence: 99%

Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD

Claudel¹,

Blanquet²,

Chaussende³

et al. 2011

J. Electrochem. Soc.

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“…The first deposition of polycrystalline AlN by CVD was performed by Renner and Anorg in 1959 [27], and most of the studies related to polycrystalline AlN grown by CVD in the Al-N-Cl-H system were achieved at deposition temperature between 600 and 1400°C [33][34][35][36][37][38][39]. They showed a slight decrease of AlN deposition rate at high temperature.…”

Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Pons

Boichot

Coudurier

et al. 2013

Surface and Coatings Technology

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“…CVD has advantages over physical vapor deposition (PVD), such as high deposition rate, large deposition area and the fact that ultra-high vacuum condition is unnecessary, which is very advantageous for industrial mass production [13]. Ammonia gas (NH 3 ) is a common nitrogen source for nitride growth in CVD process to synthesize AlN, [14,15]. However, the high thermal stability of NH 3 requires high * E-mail: subashanmugan@gmail.com synthesis temperature (typically 1000°C, thus high-temperature substrates to deposit high quality AlN thin films, which seriously limits the choice of substrate materials available for suitable application in modern electronics where Al substrates are considered as the best choice due to cost effectiveness and efficient thermal management.…”

Section: Introductionmentioning

confidence: 99%

Structural and surface analysis of chemical vapor deposited boron doped aluminum nitride thin film on aluminum substrates

Shanmugan

Devarajan

2019

Materials Science-Poland

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Chemical vapor deposition (CVD) process was conducted for synthesis of boron (B) doped aluminum nitride (B-AlN) thin films on aluminum (Al) substrates. To prevent melting of the Al substrates, film deposition was carried out at 500°C using tert-buthylamine ( t BuNH 2 ) solution delivered through a bubbler as a nitrogen source instead of ammonia gas (NH 3 ). B-AlN thin films were prepared from three precursors at changing process parameters (gas mixture ratio). X-ray diffraction (XRD) technique and atomic force microscope (AFM) were used to investigate the structural and surface properties of B-AlN thin films on Al substrates. The prepared thin films were polycrystalline and composed of mixed phases {cubic (1 1 1) and hexagonal (1 0 0)} of AlN and BN with different orientations. Intensive AlN peak of high intensity was observed for the film deposited at a flow rate of the total gas mixture of 25 sccm. As the total gas mixture flow decreased from 60 sccm to 25 sccm, the crystallite size of AlN phase increased and the dislocation density decreased. Reduced surface roughness (10.4 nm) was detected by AFM for B-AlN thin film deposited on Al substrate using the lowest flow rate (25 sccm) of the total gas mixture.

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Aluminium nitride films made by low pressure chemical vapour deposition: Preparation and properties

Cited by 40 publications

References 11 publications

Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD

Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Structural and surface analysis of chemical vapor deposited boron doped aluminum nitride thin film on aluminum substrates

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