2012
DOI: 10.1016/j.jnoncrysol.2012.01.016
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Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors

Abstract: We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone treatment of aluminium layers. The organic layer is 1-octylphosphonic acid. The preparation of aluminium oxide was studied with respect to the threshold voltage of p-channel thin-film transistors based on thermally evaporated pentacene. The results demonstrate that the threshold voltage decreas… Show more

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Cited by 16 publications
(15 citation statements)
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“…Properties of bare AlO x and AlO x functionalized with n-octylphosphonic acid The thickness of the AlO x formed by UV/ozone oxidation is in agreement with our previous experiments [30]. C 8 PA thickness reaches value of about 1.1 nm after 90-minute desorption time.…”
Section: Properties Of the Gate Dielectricsupporting
confidence: 91%
See 1 more Smart Citation
“…Properties of bare AlO x and AlO x functionalized with n-octylphosphonic acid The thickness of the AlO x formed by UV/ozone oxidation is in agreement with our previous experiments [30]. C 8 PA thickness reaches value of about 1.1 nm after 90-minute desorption time.…”
Section: Properties Of the Gate Dielectricsupporting
confidence: 91%
“…To prevent the contamination of the oxidizing surface, UVOCS UV/ozone cleaner was enclosed under a Hepa filter. AlO x preparation by UV/ozone oxidation of thermally evaporated aluminium has been reported elsewhere [30]. Approximately 10-nm-thick (9 monolayers) C 8 PA layer was thermally evaporated on top of AlO x at room temperature.…”
Section: Fabrication Of Metal-insulator-metal Structures and Otftsmentioning
confidence: 99%
“…Prompted by our previous results achieved with UV/ozone oxidation of aluminum in the ambient air [16], this paper studies four different ozone oxidation methods that were applied to thermally evaporated aluminum layers. The produced oxide layers were implemented as gate dielectrics in OTFTs.…”
Section: Introductionmentioning
confidence: 99%
“…For FTIR, a blanket layer of aluminium was thermally evaporated and UV/ozone oxidation was used to form thin AlO x [11] with low surface roughness of ~0.48 nm [8]. C 8 PA was thermally evaporated on top of AlO x and subsequently heated to 160C for 25, 90 and 210 minutes.…”
Section: Methodsmentioning
confidence: 99%