Aluminum alloy back p–n junction dendritic web silicon solar cell

Meier, D.L.; Davis, H. P.; Garcı́a, R.; Salami, J.; Rohatgi, A.; Ebong, Abasifreke; Doshi, P.

doi:10.1016/s0927-0248(00)00150-1

Cited by 51 publications

(14 citation statements)

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“…The cell was fabricated using IR belt furnace to form the front surface field and back Al p-n junction. Ebara Solar reported 13.5%-efficienct [2] 25 cm 2 and 14.1%-efficienct 33 cm 2 , n-type dendritic web solar cells [3]. Cuevas et al used two-step POCl3 diffusion, evaporated Al and photolithography contacts to demonstrate 15% efficiency on 4-cm 2 , n-type mc-Si solar cell [4].…”

Section: Introductionmentioning

confidence: 99%

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Ebong

Upadhyaya

Rounsaville

et al. 2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

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In this paper we report on the design, fabrication and modeling of 49 cm 2 , 200-mm thick, 1-5 W-cm, n-and ptype <111> and <100> screen-printed silicon solar cells. A simple process involving RTP front surface phosphorus diffusion, low frequency PECVD silicon nitride deposition, screen-printing of Al metal and Ag front grid followed by co-firing of front and back contacts produced cell efficiencies of 15.4% on n-type <111> Si, 15.1% on n-type <100> Si, 15.8% on p-type <111> Si and 16.1% on p-type <100> Si. Open circuit voltage was comparable for n and p type cells and was also independent of wafer orientation. High fill factor values (0.771-0.783) for all the devices ruled out appreciable shunting which has been a problem for the development of co-fired n-type <100> silicon solar cells with Al back junction. Model calculations were performed using PC1D to support the experimental results and provide guidelines for achieving >17% n-type silicon solar cells by rapid firing of Al back junction.

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Section: Introductionmentioning

confidence: 99%

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Ebong

Upadhyaya

Rounsaville

et al. 2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

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“…To ensure an Ohmic contact of the Al to the p-Si wafer, the Al/p-Si contact is alloyed at 580 8C in a nitrogen/hydrogen atmosphere. [11] In Figure 2, the current-density-voltage (J-V) characteristics of an Al/p-Si/PCBM/Al heterojunction is presented at room temperature and 77 K. At 297 K a current rectification ratio of 3 Â 10 4 for a bias variation from À1 to þ1 V is observed. Similar values for pristine C 60 /silicon heterojunction diodes have been obtained by Chen et al [12] Upon cooling, the reverse dark current density at À2 V bias decreases from 3 Â 10 À6 A cm À2 at 297 K to the pA cm À2 region at 77 K, while the current rectification increases to $10 7 for a bias variation from À1 to þ1 V. From an Arrhenius plot of the dark current in reverse bias at À1 V (see inset in Fig.…”

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confidence: 99%

Fullerene Sensitized Silicon for Near‐ to Mid‐Infrared Light Detection

et al. 2010

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Detection of light in the near-to mid-infrared (IR) spectral range is a technology in demand for many applications such as optical data transmission (1.55 mm), contrast enhancement for imaging systems in foggy environments, and quality control. Most of the optoelectronic devices on the market are based on the rather expensive III-V compound technology and, as a result, the monolithic integration into the well-established and cheap silicon-based complementary metal oxide semiconductor (CMOS) production process is still an unachieved goal. Here, we report on a novel light-sensing scheme based on a silicon/fullerene-derivative heterojunction that allows the realization of optoelectronic devices for the detection of near-to mid-IR light, which is fully compatible with CMOS technology. Despite the absence of light absorption by silicon and the fullerene-derivative in the IR. a heterojunction of these materials absorbs and generates a photocurrent (PC) in the near-to mid-IR. In this spectral range it is proposed that the IR PC is caused by an interfacial absorption mechanism.In essence, an inherent disadvantage of silicon for optoelectronic IR applications is its transparency beyond a wavelength of 1.1 mm. To overcome this disadvantage, several technologies such as the heteroepitaxial growth of (polycrystalline) germanium on silicon [1][2][3] or the usage of near-IR (NIR)-photoconductive and soluble nanoparticles have been developed. [4,5] In the latter case, the facile solution processing of a guest material to the silicon-based host is of particular interest. [5] In this work, the soluble C 60 derivative methano-fullerene [6,6] phenyl-C61 butyric acid methyl ester (PCBM) as guest material has been chosen (see inset of Fig. 1, where the chemical structure is depicted). In contrast to pristine C 60 , PCBM exhibits a solubility of up to 5 wt% in common organic solvents due to functionalization of the fullerene cage with a butyric acid methylester sidegroup. [6] For polycrystalline C 60 thin films processed into field effect devices, the electron mobility is of the order of 1 cm 2 Vs À1 [7,8] and for the spin-cast PCBM thin films it is approximately one to two orders lower in magnitude.[9] The microscopic charge-carrier mobility of PCBM is only weakly temperature dependent and a highly conductive state of PCBM under a filamented current density at 15 K has been reported. [10] In this Communication is shown that a p-Si/PCBM heterojunction features a PC for photon energies from $0.55 to 1.1 eV (2.25-1.12 mm). The investigated samples have a layered structure (Fig. 1). On top of a boron-doped p-Si wafer (boron concentration 10 15 -10 16 cm À3 ) the PCBM film is deposited by spin-coating, resulting in a PCBM film thickness of 140 nm. By thermal evaporation of Al the electrical front-and back-contacts to the PCBM thin film and to the p-Si wafer are formed. To ensure an Ohmic contact of the Al to the p-Si wafer, the Al/p-Si contact is alloyed at 580 8C in a nitrogen/hydrogen atmosphere. [11] In Figure 2, the current-density-vo...

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“…The latter was put into practice by inverting the conventional geometry of a p-,uc-Si I i-a-Si I n-c-Si hetero-junction solar cell with respect to light incidence, resulting in an i-HIT-solar cell (inverted hetero junction with intrinsic thin layer). The inverted cell concept is well known from mono-crystalline backside-contact Si solar cell [7], which has been applied to dendritic web silicon [8]. As shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

HW-CVD deposited μc-Si:H for the inverted heterojunction solar cell

Matsumoto

Ortega

Sánchez

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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P-type-microcrystalline-silicon I n-type-crystalline-silicon hetero-junction solar cell has been prepared by means of hot-wire chemical vapor deposition (HW-CVD) technique.The solar cell structure was illuminated on the opposite side of the normally-formed heterojunction. With this inverted structure, the photovoltaic cell has the design potential to improve the light-incident surface-texturing with the possibility to avoid the use of transparent conducting oxide (TCO).Solar cells were fabricated on Czochralsky (CZ)-grown phosphorous-doped crystalline-silicon (c-Si) substrates within 0.5 to 1 ohm-cm. HW-CVD has employed for the deposition of a very thin intrinsic hydrogenated amorphous silicon (i-a-Si) as a buffer-layer as a heterojunction interface, and boron-doped hydrogenated microcrystalline silicon (p-,uc-Si) on c-Si substrate. The tungsten catalyst temperature (T fit) was settled to 1600 °C and 1950 °C for i a-Si and p-,uc-Si films, respectively. Silane (SiH4), hydrogen (H z ) and diluted diborane (B z Hs) gases were used for p-,uc-Si at the substrate temperatures (T sub) of 200°C. The obtained I-V characteristics under simulated solar radiation at 100mW/cm z are: Jsc =26. 1 mAlcm z ; Voc = 545 mY; Jm = 21. 4 mAlcm z ; Vm = 410 mY; FF = 61.7%,with total area efficiency of 11= 8.8%. The solar cell has great potential to improve its conversion efficiency with proper surface passivation and antireflection coat.

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Aluminum alloy back p–n junction dendritic web silicon solar cell

Cited by 51 publications

References 3 publications

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Fullerene Sensitized Silicon for Near‐ to Mid‐Infrared Light Detection

HW-CVD deposited μc-Si:H for the inverted heterojunction solar cell

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Aluminum alloy back p–n junction dendritic web silicon solar cell

Cited by 51 publications

References 3 publications

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Fullerene Sensitized Silicon for Near‐ to Mid‐Infrared Light Detection

HW-CVD deposited &#x03BC;c-Si:H for the inverted heterojunction solar cell

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HW-CVD deposited μc-Si:H for the inverted heterojunction solar cell