Aluminum chemical vapor deposition with new gas phase pretreatment using tetrakisdimethylamino-titanium for ultralarge-scale integrated-circuit metallization

Sugai, Kazumi; Okabayashi, Hirofumi; Shinzawa, Tsutomu; Kishida, S.; Kobayashi, Akiko; Yako, Tadaaki; Kadokura, Hidekimi

doi:10.1116/1.588085

Cited by 22 publications

(3 citation statements)

References 3 publications

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“…Aluminum thin films, especially those obtained via chemical vapor (CVD) or plasma-enhanced sputtering depositions have several properties that make them particularly attractive materials for use in advanced electronics fabrication. − Among these are the low resistivity and high stability of the metal and low deposition temperatures. , Consequently, the surface chemistries of aluminum have been the focal point of much research. In order to fully understand the complex mechanisms of aluminum CVD, it is imperative that the elementary surface reaction mechanisms involving adsorbates bound to the surface of this metal be understood with the hope that these insights might help improve their efficiencies more generally. − Additionally, the study of the interactions of hydrogen with metals is an area which has been afforded a great deal of attention due to its importance in understanding embrittlement. − At least in part for these reasons, considerable effort has been put into studying the seemingly simple reactions of hydrogen with an aluminum single crystal surface. − These studies have shown that this adsorbate system demonstrates remarkable properties, especially as regards the kinetics of hydrogen atom recombination on low-index single crystal surfaces.…”

Section: Introductionmentioning

confidence: 99%

Collision-Induced Desorption and Reaction on Hydrogen-Covered Al(111) Single Crystals: Hydrogen in Aluminum?

and

Nuzzo

2001

J. Phys. Chem. B

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We examine the recombination and desorption of hydrogen from an aluminum(111) surface focusing on desorption processes that lead to the formation of dihydrogen and aluminum hydride (presumably alane). In addition to simple temperature-programmed reaction spectroscopy (TPRS), we examine the perturbations which occur to the desorption kinetics of these species as a result of the energy transfer due to collisions of a xenon beam at 1.6, 2.8, and 3.6 eV with a hydrogen covered surface. Whereas the recombinative desorption of dihydrogen from an Al(111) surface nominally follows an unusual zero-order rate law, bombardment of a hydrogen-covered surface with an energetic xenon atom leads to a kinetic profile more closely modeled by a higher reaction order. It also was found that upon exposure to the beam, the peak area (and thus the desorption yield) for the H2 desorption was reduced 5−25% depending on the length of exposure whereas for the aluminum hydride the percent reduction ranged from 10−80%. This suggests that both a stimulated etching and a change in state result from the beam exposure. We present evidence that suggests that the initial state of the bound hydrogen may involve at least in part a subsurface occupation.

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Section: Introductionmentioning

confidence: 99%

Collision-Induced Desorption and Reaction on Hydrogen-Covered Al(111) Single Crystals: Hydrogen in Aluminum?

and

Nuzzo

2001

J. Phys. Chem. B

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“…Pretreatment sensitization is known to increase the density of island formation during the initial stages of aluminum plating. 20,21 For Ag plating, molecular dynamics studies on the adsorption of thin metallic layers, similar to the sensitization process, on silica surfaces can significantly change the bond character of the surface. 22 As a result, there can be a decrease in Si-O-Si bond angles on the silica surface.…”

Section: Effects Of Processing On Strengthmentioning

confidence: 99%

Mechanical properties of hollow glass waveguides

Rabii

Harrington

1999

Opt. Eng

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Hollow glass waveguides with losses as low as 0.2 dB/m at the 10.6 m are an attractive fiber delivery system for a broad range of IR wavelengths. These guides are made by depositing, using liquidphase chemistry methods, silver and silver iodide films on the inside of silica tubing. The wet-chemistry techniques used in the process reduce somewhat the mechanical properties of the hollow-silica guides compared to the uncoated tubing used to make the guides. In particular, the mean failure stress is reduced from 8.4 GPa for uncoated, as-drawn, 530-m bore silica tubing to 6.12 GPa for the Ag/AgI coated, 530-m bore waveguide. In addition, the Weibull modulus decreases from 96.9 to 17. This means that the bending radius of the hollow guides, which is inversely proportional to the mean failure stress, increases from about 1 to about 1.5 cm. The reason for the decrease in strength for the processed tubing is the slow reaction of the aqueous coating solutions with the silica surface. Nevertheless, the bending radii for the guides is still quite small and the fatigue behavior of the guides, as measured by the crack growth parameter n, is essentially the same for processed or uncoated tubing.

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“…In plasma etching processes, the outcome is sensitive to a large number of factors including wafer temperature and etch species, and these factors affect the etch rate and etched features in complicated ways (1)(2)(3)(4). For example, etch selectivity was enhanced by adjusting the wall temperature since the surface loss probabilities of active species on the walls vary with temperature (3)(4)(5)(6). Moreover, the sticking coefficient of etching products that form a protecting film against etching on trench sidewall depends on the substrate temperature (4,(6)(7)(8).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Control of Internal Plasma Parameters Toward Atomic Level Processing

Sekine¹,

Tsutsumi²,

Fukunaga³

et al. 2016

ECS Trans.

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Plasma processes have been indispensable core technologies to manufacture ultra-large scale integrated circuits and variety of devices. To develop the next generation devices, advancing of the plasma processes should be needed. Towards the surface processing with atomic level accuracy with low damage, the precise control of internal parameters that actually define the surface reaction has become more important. We have developed an autonomous plasma manufacturing system, which measures the densities of some atomic species with a compact monitoring system and controls them at optimum values in real time. The spatiotemporal fluctuation of species in the plasma affects much on the surface reactions, which is fatal to fabricate nano-size, atomic level structures. Then, we can make nano-scale etching with an ultrahigh precision by employing the autonomous plasma system.

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Aluminum chemical vapor deposition with new gas phase pretreatment using tetrakisdimethylamino-titanium for ultralarge-scale integrated-circuit metallization

Cited by 22 publications

References 3 publications

Collision-Induced Desorption and Reaction on Hydrogen-Covered Al(111) Single Crystals: Hydrogen in Aluminum?

Collision-Induced Desorption and Reaction on Hydrogen-Covered Al(111) Single Crystals: Hydrogen in Aluminum?

Mechanical properties of hollow glass waveguides

(Invited) Control of Internal Plasma Parameters Toward Atomic Level Processing

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