Aluminum-Doped Zinc Oxide Transparent Electrode Prepared by Atomic Layer Deposition for Organic Light Emitting Devices

Liu, Hui; Liu, Yunfei; Xiong, Pengpeng; Chen, Ping; Li, Huiying; Hou, Jing-Wen; Kang, Bonan; Duan, Yu

doi:10.1109/tnano.2017.2700408

Cited by 36 publications

(14 citation statements)

References 29 publications

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“…They also noticed a decrease in conductivity at same doping level. In our case, it should also be noted that the achieved conductivity value for the ZIO thin film composition with 5.0 mol% In 2 O 3 corresponds to one of the best among values declared for transparent electrodes formed on unheated substrates [36][37][38][39].…”

Section: Resultssupporting

confidence: 59%

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Akhmedov

Abduev²,

Murliev

et al. 2021

Materials

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The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In2O3) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In2O3 content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In2O3) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.

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Section: Resultssupporting

confidence: 59%

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Akhmedov

Abduev²,

Murliev

et al. 2021

Materials

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“…AZO has specific benefits over the commonly used transparent electrode of indium tin oxide (ITO), such as a composition made of abundant materials, controllable doping level and bandgap engineering possibilities that make it, in principle more flexible in device applications. AZO has been shown as efficient transparent electrodes in Si [152], perovskite [153] and polymer [154] solar cells, as well as organic [155] and inorganic [156] LEDs, and as an antireflection coating for photovoltaic cells [157], also when not doped with Al [158] (see Figure 9).…”

Section: Thin Filmsmentioning

confidence: 99%

ZnO as a Functional Material, a Review

2019

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Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility of bandgap engineering, the possibility to dope it into high electron concentrations, or with many transition or rare earth metals, as well as the many structures it can form, all explain the intensive interest and broad applications. This review aims to showcase ZnO as a very versatile material lending itself both to bottom-up and top-down fabrication, with a focus on the many devices it enables, based on epitaxial structures, thin films, thick films, and nanostructures, but also with a significant number of unresolved issues, such as the challenge of efficient p-type doping. The aim of this article is to provide a wide-ranging cross-section of the current state of ZnO structures and technologies, with the main development directions underlined, serving as an introduction, a reference, and an inspiration for future research.

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“…The electrode showed an improvement compared with the AgNW film with R SH values from 224 X/h to 18.1 X/h and r DC /r Op values from 41.75 to 77.53. In comparison with previous literature on several kinds of transparent conductive electrode, the FOM value of the AgNWs/GZO NPs ($ 0.65 9 10 À2 ) at the wavelength of 550 nm was higher than that of Cu thin films, 27 AuCl 3 -modified graphene, 28 ALD-deposited Al-doped ZnO, 29 AgNWs/NOA63, 30 or photoresist-passivated AgNWs, 31 but lower than that of Al-doped ZnO/ AgNWs 32 or AgNWs/Ag-grid. 33 Here, the FOM value was calculated using the formula FOM = T 10 /R SH , where T is the transmittance.…”

Section: Agnws and Gzo/agnw Nanocomposite Filmsmentioning

confidence: 44%

Synthesis of Gallium-Doped Zinc Oxide (GZO) Nanoparticles for GZO/Silver Nanowire Nanocomposite Transparent Conductive Electrodes

Huynh

Chu

Hoang

et al. 2020

Journal of Elec Materi

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Gallium (Ga)-doped zinc oxide nanoparticles (GZO-NPs) have been synthesized using a heating-up method. The Ga doping concentration strongly affected the particle size, distribution, and bandgap energy of the GZO-NPs. When the Ga concentration was increased from 0% to 5%, the average size of the GZO-NPs decreased from 57 nm to 16 nm while the bandgap increased from 3.14 eV to 3.26 eV. On further increase of the Ga content to 7% and 9%, the particle size increased while the bandgap narrowed. The GZO-NPs synthesized with 5% Ga showed the best uniformity and smallest average diameter of approximately 16 nm. The GZO-NPs with 5% Ga were applied to reduce the mechanical contact between the AgNWs in GZO/silver nanowire (AgNW) composite for application as a transparent conductive electrode, yielding R SH = 18.1 X/h, T = 77.8% at 550 nm, and r DC /r Op = 77.53. These results indicate that such GZO-NPs are a very promising nanocrystalline ink precursor for printing thin films for application in nanocomposite transparent conductive electrodes.

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Aluminum-Doped Zinc Oxide Transparent Electrode Prepared by Atomic Layer Deposition for Organic Light Emitting Devices

Cited by 36 publications

References 29 publications

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

ZnO as a Functional Material, a Review

Synthesis of Gallium-Doped Zinc Oxide (GZO) Nanoparticles for GZO/Silver Nanowire Nanocomposite Transparent Conductive Electrodes

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